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Kyocera AVX Components 100B910GTN500XT Silicon RF Capacitors / Thin Film 91PF 500V 2% 1111
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TTI	100B910GTN500XT	Reel	500		500	1 - 10 - 100 - 1000 $6.42 10000 $6.42	Buy Now
Kyocera AVX Components 100B910JTN500XT1K Silicon RF Capacitors / Thin Film 91PF 500V 5% 1111
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TTI	100B910JTN500XT1K	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 100B910FW500XT Silicon RF Capacitors / Thin Film 500volts 91pF 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100B910FW500XT	Reel			500	1 - 10 - 100 - 1000 $7.10 10000 $7.10	Buy Now
American Technical Ceramics Corp ATC100B910KRW500X CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.000091 UF, THROUGH HOLE MOUNT
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Quest Components	ATC100B910KRW500X		794			1 $1.80 10 $1.80 100 $1.80 1000 $0.83 10000 $0.83	Buy Now
American Technical Ceramics Corp ATC100B910KP 100B910KP
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Quest Components	ATC100B910KP		97			1 $1.88 10 $1.88 100 $1.13 1000 $1.13 10000 $1.13	Buy Now

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ATC100B910 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
L-Band 1200-1400 MHz Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910 Contextual Info: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description	Original	stac1214-250 stac265b l-band 1200-1400 mhz atc100b390 +3cr1206-8w atc100b101 atc100b910	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial	Original	mrfe6vp6300h mrfe6vp6300hr3 mrfe6vp6300hsr3	PDF
Contextual Info: Document Number: MMRF1310H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, industrial including laser and plasma exciters , broadcast (analog and digital),	Original	mmrf1310h mmrf1310hr5 mmrf1310hsr5 7/2014semiconductor	PDF
ATC100B620 Abstract: LET9120 27291PC ATC100B101 Contextual Info: LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package	Original	let9120 atc100b620 27291pc atc100b101	PDF
MRFE6VP6300 Abstract: MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 0, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR	Original	mrfe6vp6300h mrfe6vp6300hr3 mrfe6vp6300hsr3 mrfe6vp6300 +8mrfe6vp6300hr mrfe6vp6300h date mrfe6vp ga3095-alc an1955 1812sms-r12jlc atc100b820jt500xt 465m-01	PDF
MRFE6VP6300H Abstract: MRFE6VP6300HR3 MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	mrfe6vp6300h mrfe6vp6300hr3 mrfe6vp6300hsr3 mrfe6vp +7ga3095-alc mrfe6vp6300h date an1955 1812sms-r12jlc atc100b910jt500x j248 j980	PDF
ATC100B101 Abstract: STAC265B ATC100B910 ATC100B390 STAC1214-250 Contextual Info: STAC1214-250 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet − preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz	Original	stac1214-250 stac265b atc100b101 atc100b910 +1atc100b390	PDF
B10T Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	mrf6v2010n mrf6v2010nr1 mrf6v2010nbr1 b10t +9multicomp chip resistor 911 atc100b6r2 atc200b104 a113 a114 a115 an1955 c101 jesd22	PDF
ATC100B910 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with	Original	mrf6v2010n mrf6v2010nr1 mrf6v2010nbr1 atc100b910	PDF
ATC100B390 Contextual Info: STAC1214-250 LDMOS L-band radar transistor Datasheet - preliminary data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 14 dB gain over 1200 1400 MHz • ST air cavity / STAC package Description STAC265B	Original	stac1214-250 stac265b docid022749 atc100b390	PDF
250GX-0300-55-22 Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with	Original	mrf6v2010n mrf6v2010nr1 mrf6v2010nbr1 250gx-0300-55-22 +7atc100b102jt50xt b10t 1812sms-82nj esmg 2743021447 atc100b6r2 mrf6v2010nb	PDF
250GX-0300-55-22 Abstract: ATC100B102JT50XT Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in	Original	mmrf1012n mmrf1012nr1 250gx-0300-55-22 atc100b102jt50xt	PDF
Arlon CuClad PCB board material Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with	Original	mrf6v2010n mrf6v2010nr1 mrf6v2010nbr1 arlon cuclad pcb board material +9atc100b102jt50xt 250gx-0300-55-22 250gx b10t cdr33bx104akym 0.1 uf 50v chip capacitor atc200b223kt50xt kemet c1825c225j5rac, 2.2 uf chip cap atc100b270jt500xt cdr33bx104akym	PDF