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    ATC200B104 Search Results

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    ATC200B104 Price and Stock

    Kyocera AVX Components

    Kyocera AVX Components 200B104KW50XC100

    Silicon RF Capacitors / Thin Film .1UF 50V 10% 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 200B104KW50XC100 WAFL 1,800 100
    • 1 -
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    • 100 $5.10
    • 1000 $4.91
    • 10000 $4.91
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    Kyocera AVX Components 200B104KT50XT/500

    Silicon RF Capacitors / Thin Film 50V 0.1UF 10% SMD/SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 200B104KT50XT/500 Reel 1,000 500
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    • 1000 $3.79
    • 10000 $3.79
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    Kyocera AVX Components 200B104KTN50XT

    Silicon RF Capacitors / Thin Film .1UF 50V 10% 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 200B104KTN50XT Reel 500
    • 1 -
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    • 1000 $5.27
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    Kyocera AVX Components 200B104MT50XT1K

    Silicon RF Capacitors / Thin Film .1UF 50V 20% 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 200B104MT50XT1K Reel 1,000
    • 1 -
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    • 100 -
    • 1000 $3.92
    • 10000 $3.92
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    Kyocera AVX Components 200B104MMS50XC20

    Silicon RF Capacitors / Thin Film .1UF 50V 20% 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 200B104MMS50XC20 Each 100
    • 1 -
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    • 100 $4.20
    • 1000 $4.09
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    Find more ATC200B104 price and stock on Findchips.com

    ATC200B104 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MwT-22Q4

    Abstract: ATC100a101 ATC200B104 ATC700a ATC700A102 MWT22Q4
    Contextual Info: MwT-22Q4 High Power, High Linearity Packaged FET Features • • • • Ideal for DC-4000 MHz High Power / High Linearity Applications Excellent RF Performance: o 33 dBm P1dB o 47 dBm IP3 o 16 dB SSG @ 2000 MHz o 40% PAE MTTF > 100 years @ Channel Temperature 150°C


    Original     		MwT-22Q4 DC-4000 MwT-22Q4 cdma2000, TRL10 ATC100a101 ATC200B104 ATC700a ATC700A102 MWT22Q4 PDF

    TB225

    Contextual Info: April 5, 2013 TB225 Frequency=76-90MHz Pout=20W Gain=18dB Vds=24Vdc Idq=400mA Efficiency=57% SA701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com April 5, 2013 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012


    Original     		TB225 76-90MHz 24Vdc 400mA SA701 20AWG FT-50-43 BN-61-202. UT-141AA 102S42E330JV3S TB225 PDF

    B10T

    Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 B10T multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22 PDF

    ATC100B910

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 ATC100B910 PDF

    250GX-0300-55-22

    Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 250GX-0300-55-22 ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1 PDF

    atc200b104kw50

    Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
    Contextual Info: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 PDF

    250GX-0300-55-22

    Abstract: ATC100B102JT50XT
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1012N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1012NR1 Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in


    Original     		MMRF1012N MMRF1012NR1 250GX-0300-55-22 ATC100B102JT50XT PDF

    Arlon CuClad PCB board material

    Abstract: ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 2, 8/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		MRF6V2010N MRF6V2010NR1 MRF6V2010NBR1 MRF6V2010NR1 Arlon CuClad PCB board material ATC100B102JT50XT 250GX-0300-55-22 250GX B10T CDR33BX104AKYM 0.1 UF 50V CHIP CAPACITOR ATC200B223KT50XT kemet c1825c225j5rac, 2.2 uf chip cap ATC100B270JT500XT CDR33BX104AKYM PDF