27291PC Search Results

air variable capacitor

Abstract: LET9045C M243 365 pF variable capacitor
Contextual Info: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

LET9045f

Abstract: 2L TRANSISTOR M250 atc 11 capacitor 330 LET9045
Contextual Info: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

Contextual Info: LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 150 W with 20 dB gain @ 860 MHz ■ BeO-free package Description

transistor j 127

Contextual Info: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @28 V = 45 W with 18.5 dB gain @ 960 MHz ■ POUT (@36V) = 70 W with 18.5 dB gain @ 960

ATC100B620

Abstract: LET9120 27291PC ATC100B101
Contextual Info: LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package

Contextual Info: SD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 30 WATTS 28 VOLTS 9.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2904 is a gold metallized N-Channel MOS

LET9045F

Abstract: M250 27291PC
Contextual Info: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

2L TRANSISTOR

Abstract: Capacitor 0.22 uF CR1206-8W LET9045C M243
Contextual Info: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

0821 ST

Abstract: LET9045C 27291PC M243 CR1206-8W-112JB
Contextual Info: LET9045C RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive M243 epoxy sealed

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

Contextual Info: LET16060C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 60 W with 13.8 dB gain @ 1600 MHz • BeO free package

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB

Contextual Info: LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @28 V = 45 W with 16 dB gain @ 1600 MHz • BeO free package

Contextual Info: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @28 V = 45 W with 18.5 dB gain @ 960 MHz ■ POUT (@36V) = 70 W with 18.5 dB gain @ 960