24DBM Search Results

transistor Bf 981

Abstract: START540 START540TR BF320 SPECTRE MODEL transistor bf 968
Contextual Info: START540 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 0.9dB @ 1.8GHz, 5mA, 2V • HIGH OUTPUT IP3 = 24dBm @ 1.8GHz, 20mA, 2V • GOOD RUGGEDNESS BVceo = 4.5V • TRANSITION FREQUENCY 45GHz • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE

wifi amplifier circuit diagram

Abstract: wifi antenna schematic wifi amplifier circuit wifi power amplifier circuit bidirectional wifi amplifier
Contextual Info: RF5745 2.4GHz TO 2.5GHz, 802.11b/g/n SINGLE-BAND FRONT END MODULE Features        3 VREG 4 C RX C TX BT 12 C BT SP3T 11 ANT 2F0 Filter 24dBm Output Power for Zigbee Applications 20dBm Output Power for 11b Meeting Spectral Mask 17dBm Output Power for 11g,

Contextual Info: MMIC AP249 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 43dBm Output IP3 • 26dB Gain • 24dBm P1dB • Single +9V Supply •C DMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP249 is a high linearity amplifier designed with GaAs MMIC. AP249 is designed for applications such as GSM, CDMA, WCDMA driver devices which require high IP3

TGA2921

Contextual Info: Advance Product Information December 5, 2003 4 Watt 802.11a Packaged Amplifier TGA2921-EPU-SG Key Features • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 800mA 36 dBm Nominal P1dB @ 8V 800mA IMD3 -50dBc @ 24dBm SCL, Typical

Contextual Info: Advance Product Information July 22, 2003 4 Watt UNII-Band Packaged Amplifier TGA2921-EPU-SG Key Features • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 800mA 36 dBm Nominal P1dB @ 8V 800mA IMD3 -50dBc @ 24dBm SCL, Typical

Contextual Info: Advance Product Information June 24, 2003 4 Watt UNII-Band Packaged Amplifier TGA2921-EPU-SG Key Features • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 800mA 36 dBm Nominal P1dB @ 8V 800mA IMD3 -50dBc @ 24dBm SCL, Typical

AH201

Abstract: 68 4401 JESD22-A114 J-STD-020A LLQ1608 amp 9435 marking code 9435 TOKO 707 WJ AH201 amplifier
Contextual Info: AH201 The Communications Edge TM Medium Power, High Linearity Amplifier Product Features • +30 dBm P1dB • +47 dBm Output IP3 • 17 dB Gain @ 900 MHz • MTBF >100 Years • Single Positive Supply • Internally Matched • 24dBm IS-95 Channel Power @ -45dBc ACPR

TRANSISTOR C 557 B

Contextual Info: EC5724 W I D E B A N D P O W E R F ET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • Gain at 1dB compression point : single cell 600 urn : 8dB at 18GHz four cells (2400 [im) : 7dB at 18GHz • Output power at 1dB compression po in t: single cell (600nm) : 24dBm

CLC560

Abstract: 100MHZ KH560 KH560AI KH560AK KH560AM KH561 Wideband Low Distortion Driver Amplifier
Contextual Info: www.fairchildsemi.com KH560 Wideband, Low Distortion Driver Amplifier Features • ■ ■ ■ ■ ■ General Description The KH560 is a wideband DC coupled, amplifier that combines high output drive and low distortion. At an output of +24dBm 10Vpp into 50Ω , the -3dB

LAVI-22VH

Contextual Info: Frequency Mixer LAVI-22VH+ Typical Performance Curves Conversion Loss @ IF=100MHz 12.0 LO = +18dBm Conversion Loss dB 11.4 LO = +21dBm 10.8 LO = +24dBm 10.2 9.6 9.0 8.4 7.8 7.2 6.6 6.0 160 444 728 1012 1296 1580 1864 2148 2432 2716 3000 RF Frequency (MHz)

20 PIN LEADLESS CHIP CARRIER

Abstract: RF56033 RF5603 OUT313
Contextual Info: RF56033.3V, 3.3GHz to 3.6GHz Linear Power Amplifier RF5603 Proposed 3.3V, 3.3GHz TO 3.6GHz LINEAR POWER AMPLIFIER 17 16 15 RF OUT 1st „ Single 3.3V Supply „ 30dB Small Signal Gain Typ. „ 3% EVM (RMS) at 24dBm, 3.3V „ ICC <400mA at 24dBm „ Include Power Detector on Die

ro4003

Abstract: 802.11a Amplifier roger rogers FPD750SOT89
Contextual Info: EB750SOT89AJ FPD750SOT89 5.6GHz PA EVALUATION BOARD FEATURES • • • • ¥ 24dBm P1dB 11.5dB Gain 1.5dB Noise Figure -46dBc IMD @ 12dBm Pout per Tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It has a distributed

LAVI-10VH

Contextual Info: Frequency Mixer LAVI-10VH+ Typical Performance Curves Conversion Loss @ IF=175MHz 12.0 LO = +18dBm 11.3 Conversion Loss dB LO = +21dBm 10.6 LO = +24dBm 9.9 9.2 8.5 7.8 7.1 6.4 5.7 5.0 260 520 780 1040 1300 1560 1820 2080 2340 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=650MHz

Contextual Info: N Not Intended For New Designs Comlinear CLC561 Wideband, Low Distortion DriveR-Amps General Description Features • ■ ■ ■ te ■ 150MHz bandwidth at +24dBm output Low distortion 2nd/3rd: -59/-62dBc @ 20MHz and 10dBm Output short circuit protection

730019

Abstract: 100MHZ CLC561 KH560 KH561 KH561AI KH561AK KH561AM KAN-01
Contextual Info: www.cadeka.com KH561 Wideband, Low Distortion Driver Amplifier Features • ■ ■ ■ ■ ■ General Description The KH561 is a wideband DC coupled, amplifier that combines high output drive and low distortion. At an output of +24dBm 10Vpp into 50Ω , the -3dB

LTE 700Mhz Receiver

Abstract: MAX19985 JESD51-7
Contextual Info: 19-4293; Rev 0; 10/08 Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer The MAX19999 dual-channel downconverter provides 8.3dB of conversion gain, +24dBm input IP3, +11.4dBm 1dB input compression point, and a noise figure of

rfid reader

Abstract: WJC200 API 6200 rfid module International Semiconductor,Inc transistor 6c x rfid reader module RFID uart 18000-6B RFID specifications
Contextual Info: WJM1000 Next Generation RFID Reader Module Based on the WJC200 Gen2 RFID reader chipset Key Features • Multi-protocol support: ISO 18000-6C Gen2 & ISO 18000-6B • Dynamic RF output power: 10dBm to 24dBm range • Two antenna ports for added flexibility

Contextual Info: Frequency Mixer LAVI-2VH+ Typical Performance Curves Conversion Loss vs. IF @ RF=550.1MHz Conversion Loss @ IF=30MHz 12.0 8.0 LO = +22dBm LO = +23dBm 10.2 LO = +24dBm Conversion Loss dB 10.8 7.9 LO = +23dBm Conversion Loss (dB) 11.4 7.8 7.7 9.6 7.6 9.0 7.5

Contextual Info: MMIC AP249 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 43dBm Output IP3 • 26dB Gain • 24dBm P1dB • Single +9V Supply •C DMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP249 is a high linearity amplifier designed with GaAs MMIC. AP249 is designed for applications such as GSM, CDMA, WCDMA driver devices which require high IP3

AE616

Contextual Info: E-pHEMT AE616 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 37dBm Output IP3 • 20dB Gain at 900MHz • 24dBm P1 dB • Single +5V Supply • Pb Free / RoHS Standard • Cellular, PCS, W-CDMA Systems • High Linearity Drive Amplifier

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0917A L & S BAND / 0.25W SMD non - matched DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm

si 4422

Abstract: FPD1500DFN FPD750DFN FPD750SOT89 Z624 Z5 1512
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied „ „ „ „ GaAs HBT 24dBm Output Power P1dB at 1.85GHz

GP 841 Diode

Abstract: 4511 gm GG SMD MGF0917A K 3561 fet 2255
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm

kh56

Contextual Info: A m p l i fy t h e H u m a n E x p e r i e n c e www.cadeka.com KH563 Wideband, Low Distortion Driver Amplifier Features • ■ ■ ■ ■ General Description 150MHz bandwidth at +24dBm output Low distortion 2nd/3rd: -59/-62dBc @ 20MHz and 10dBm Output short circuit protection