MPSA65 Search Results

MPSA66

Abstract: MPSA63 MPSA62 MPSA64 MPSA65
Contextual Info: Data Sheet MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 Central Sem iconductor Corp. 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 PNP SILICON DARLINGTON TRANSISTORS JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors

BTA65

Abstract: PSA65
Contextual Info: E E M C O N O U C TO R m MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS

MPSA65

Abstract: MPS-A65 MMBTA65 MPSA64 PZTA65
Contextual Info: MPSA65 MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Contextual Info: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K

Contextual Info: PNP Transistors * / % D isc re te P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor" P N P D arlin g to n T ra n s is to rs V CBO vV CES v EBO *CBO Case Style MPSA63 TO-92 92 30 0.1 30 MPSA64 TO-92 (92) 30 0.1 MPSA65 TO-92 (92) 30 0.1 (V)

FAIRCHILD SOT-223 MARK

Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
Contextual Info: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.

Contextual Info: MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

Contextual Info: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings

Contextual Info: MPSA65 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)30â V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50k

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

603 transistor npn

Abstract: BT 316 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

MPS-A68

Abstract: mpsa66 MPSA68 MPS-A65 mpsa65 MPS-A66
Contextual Info: MPS-A65 MPS-A66 SILICON PNP S IL IC O N D A R L IN G T O N T R A N S IS T O R S PNP S IL IC O N D A R L IN G T O N A M P L IF IE R T R A N S IS T O R S . . . designed fo r pre-am plifier in p u t a pplicatio n s requ irin g high inp ut impedance. H ig h D C C urren t G a in ~

D40C2

Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: G E SOLI» STATE 01 3875081 G E SOLID DE~| 3075001 0G17T=ia S STATE 01E 17992 Signal Transistors- D T ' i i - n MPS-A65 Silicon Darlington Transistors TO-92 T h e G E /R C A M PS-A 65 is a planar epitaxial passivated PN P silicon Darlington transistor designed for pream plifier input

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

mpsa14

Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66
Contextual Info: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­