PSA64 Search Results

BTA65

Abstract: PSA65
Contextual Info: E E M C O N O U C TO R m MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS

MPSA63

Abstract: MPSA64
Contextual Info: I • N AUER PHILIPS/DISCRETE b'îE D ■ , ^ 5 3 ^ 3 1 GDEÖDEl T7M BiAPX I MPSA63 I PSA64 P-N-P DARLINGTON TRANSISTORS P-N-P d a rlin g to n transistors in a plastic TO -92 envelope fo r general purpose applications. Q U IC K R E F E R E N C E D A T A M PSA64

Contextual Info: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted

Contextual Info: MPSA63 PSA64 _ y v. P-N-P DARLINGTON TRANSISTORS P-N-P d a rlin g to n transistors in a plastic TO 92 package fo r general purpose applications. QUICK REFERENCE DATA M PSA64 M PSA63 C o lle c to r-e m itte r voltage II o LU CO > C o lle c to r base voltage

mpsa64

Abstract: MPSA63 MPSA75 MPS-A62
Contextual Info: MPSA55, MPSA56 For Specifications, MPSA62 See M PSA 05, M PSA 06 Data thru MAXIMUM RATINGS Symbol MPSA62 MPSA63 M PSA64 Unit Collector-Emitter Voltage VC ES -2 0 -3 0 Vdc Collector-Base Voltage v CBO -2 0 Emitter-Base Voltage v EBO Rating -3 0 - 10 Vdc Vdc

MPSA63

Abstract: MPSA64 MPSA05 MPSA06 MPSA55 MPSA56 MPSA62 MPSA75 MPS-A63 MPS-A62
Contextual Info: MPSA55, MPSA56 1 For Specifications, See MPSA05, MPSA06 Data thru M A XIM U M RATINGS Rating Sym bol Collector-Emitter Voltage M PSA62 M PSA63 M PSA 6 4 Unit VC ES -2 0 -3 0 Vdc Collector-Base Voltage VCBO -2 0 -3 0 Vdc Emitter-Base Voltage vebo - 10 Vdc ic

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2n5963

Contextual Info: I Sm all Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEA D VcBO v CEO v EBO V (V ) (V ) 'C B O hFE p V CBC v CE @ IC (V ) (m A ) V C E ( S A T ) ® !C C 0b »T NF to ff CODE (V ) (V ) (m A ) *< CES *VC E S 2N2712 NPN A M PU SW ITCH ECB

SA62

Abstract: MPSA63 equivalent MPS62
Contextual Info: TOSHIBA MPSA62,63,64 Transistor Unit in mm Silicon PNP Epitaxial Type M AX. Designed For Pre-Amplifier Input Application Features • High DC Current Gain @ lc = 10mA - hFE = 5000 Min. MPSA63 10000 (Min.) PSA64 20000 (Min.) MPSA62 • Collector-Emitter Breakdown Voltage

PN5416

Abstract: 2N5415
Contextual Info: 18 Small Signal Leaded Devices High Voltage Transistors n Type hFE min @ ^CE sat @ *c max (V) (mA) 'c (mA) fT min (MHz) @ 'c Pkg (V) *c (mA) TO-39 TO-39 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 350 250 140 160 300 200 350 250 1000 1000 600 600 500 500 1000 1000

TRANSISTOR A64

Abstract: FAIRCHILD SOT-223 MARK MMBTA64 MPSA64 PZTA64
Contextual Info: S E M IC O N D U C T O R tm PSA64 MMBTA64 TO-92 SOT-23 PZTA64 B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Màximum Rdtinys

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

bc557

Abstract: BDX472 BDX452
Contextual Info: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

PSA77C

Abstract: PS6535C
Contextual Info: SP RA GU E/ SENIC OND GROUP 8 5 1 4 0 1 9 SPRA G U E , i3 D • 0513050 Q00357M 7 ■ S E M IC O N D S / IC S 93D 7 "-" & 7 03574 ^ BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘MPS’ Device Types ELECTRICAL C HA R A C T ER IST IC S at TA = 25°C DC Current Gain

z10m

Abstract: psa56
Contextual Info: Transistors TO-92 JEDEC Standards Numbers #N PN Transistors General purpose small signal amplifiers P a ckage BV qbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) (EBC) 30V 2N3860 TO -92 (ECB) 2N5088 BV ebo Min. hFE Min . Max.