MPSA66 Search Results

MPSA66

Abstract: MPSA63 MPSA62 MPSA64 MPSA65
Contextual Info: Data Sheet MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 Central Sem iconductor Corp. 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 PNP SILICON DARLINGTON TRANSISTORS JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: MPSA66 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)30â V(BR)CBO (V)30 I(C) Max. (A)300m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.75k

Contextual Info: MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

MPS-A68

Abstract: mpsa66 MPSA68 MPS-A65 mpsa65 MPS-A66
Contextual Info: MPS-A65 MPS-A66 SILICON PNP S IL IC O N D A R L IN G T O N T R A N S IS T O R S PNP S IL IC O N D A R L IN G T O N A M P L IF IE R T R A N S IS T O R S . . . designed fo r pre-am plifier in p u t a pplicatio n s requ irin g high inp ut impedance. H ig h D C C urren t G a in ~

D40C2

Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

mpsa14

Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66
Contextual Info: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

2N3859

Contextual Info: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )

2N5381

Abstract: 2N2926 transistors TO-92 case 2N3707
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff

TO92-EBC

Abstract: mpsd54
Contextual Info: ROHM CO LTD llD E D VflEâ'm D0032Ô3 7 IRHM transistors 7 = 3 /-/T T-27-29 Medium Power Amplifiers Type RN5815 RN5817 RN5819 Package Fig-1 TO-92 (EBC) TO-92 (EBC) TO-92 (EBC) BVcbo BVceo BVebo Min, Min. Min. . 50V 50V 50V MPS4354 TO-92 (EBC) 60V MPS4355

FPQ3725

Abstract: 2n999 FPQ3724 FPQ-3724
Contextual Info: TRANSISTORS— MULTIPLE TRANSISTORS NPN DARLINGTON AMPLIFIER TRANSISTORS NUMERIC LISTING METAL AND PLASTIC PACKAGE V CEO VOLTS TYPE MHz ^ob pF MIN MAX h FE hFE MIN - MAX MIN @ •c mA PD V 2 5 "c mW Package 310 TO-92 MPSA12 20 20000 @ 10 MPSA13 30 5000 @

MPS9681F

Abstract: MPS9681T MPS9682H mps9682 mps9681
Contextual Info: DEVICE TYPf PACKAGE BVCEO BVCBO BVEBO tCBO IVI M I N I VI M I N I VI M I N MPS9680U MPS9681F MPS9681G MPS9681H MPS968H PNP PNP PNP PNP PNP TO-92 TO-92 TO-92 TO-92 TO-92 72 (72) (72) (72) (72) 12 18 18 18 18 20 25 25 25 25 MPS9681J MPS9681K MPS9681L MPS9681S

mpsa65

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30

n3904

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

MPSA13

Contextual Info: MPS MPS MPS MPS THE MPS-A15» MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T O -9 2 A EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d .vice i, v o lu a * and currant v a lu « a n n e ^ a llx .

Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE (V) (V) (V) W e v CE lC hFE VC BO v CEO v EBO •CBO » VCB0 (V) (V) (mA) VCE(S/IlT ) 0 i C Cob (V) (mA) »T NF •off <PF) (MHz) (dB) *c * MPSA25 NPN DARLINGTON EBC MIN 40

MT4104

Abstract: BCW83 bc517 2n5306 to 92F
Contextual Info: Miniature Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS Pd Ic VcEO mA (mW) (V) H fe min max Ic (mA) VcE (V) BC146 BC146R BC146Y BC146G BC200 N N N N P MT-42 MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 50 50 20 20 20 20 20 80 80 140 280 50 550

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books