2N6427 Search Results

LB 124 transistor

Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor

2N6427

Abstract: 2N6426
Contextual Info: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc

2N6426G

Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
Contextual Info: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from

Contextual Info: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS

2N6427

Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N sot23 mark code e2 MPS-A14
Contextual Info: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

BC237

Abstract: 2n6426 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys

Contextual Info: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K

2N6427

Abstract: BP317 npn darlington transistor 2n6427
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor Product specification File under Discrete Semiconductors, SC04 1997 Jul 04 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 FEATURES PINNING

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: 2N6427 MMBT6427 C E C B TO-92 SOT-23 E B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings*

bulk inner box label ST

Contextual Info: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N6426

Abstract: 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG
Contextual Info: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage

2N6426

Contextual Info: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage

2n6426

Contextual Info: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage

LB 124 transistor

Abstract: 2n6427 equivalent
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D l'7 1 b 4 1 43 □ O G 'ínO O 2N6427 DARLINGTON TRANSISTOR TO -92 • Collector-Emitter Voltage: V ceO=40V * Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic I NPN EPITAXIAL • SILICON DARLINGTON TRANSISTOR

D40K2

Abstract: T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725
Contextual Info: bûE D w Devices V CE0 «ist 2N7051 •e PNP Min 1 20,000 1,000 2N7053 1 2N6725 1 Max 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 4,000 40,000 500 1.5 1A 2mA 100 60,000 1 10,000 10,000 200 1,000 1.5A 0.3 2N5308 0.3 2N6427 1 200 1,000 1.5A 2,000

Contextual Info: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

2N6426

Abstract: 2N6427
Contextual Info: 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous

TRANSISTOR c 5578 B

Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
Contextual Info: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●

2N6427

Abstract: 2n6426
Contextual Info: 2N6426* 2N6427 M A X IM U M R A T IN G S Rating 2 Sym b o l Value Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage V cBO 40 V dc Emitter-Base Voltage Vebo 12 V dc Collector Current — C o n tinu ous 'c 500 m A dc Total Device Dissip ation <a- T a = 25’C

2n6427

Abstract: 2N6426
Contextual Info: 2N6426* 2N6427 M A X IM U M RATINGS Rating Symbol Value U n it v CEO 40 Vdc C ollector-Base V o ltage v CBO 40 Vdc Em itter-Base V o ltage v EBO 12 Vdc C o lle ctor-E m itter V o ltage CASE 29-04, STYLE 1 TO-92 TO-226AA C ollector C u rrent — C o ntinuous

2n6427

Abstract: IC 3140 sot 23 mark 1v
Contextual Info: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.