2N7053 Search Results

TRANSISTOR 2N7053

Abstract: NZT7053
Contextual Info: 2N7051 / 2N7053 / NZT7053 2N7051 2N7053 NZT7053 C C B TO-92 E C B TO-226 SOT-223 E B E C NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.

2N7051

Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705
Contextual Info: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

2N7052

Abstract: 2N7053 NZT7053
Contextual Info: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

NZT7053

Abstract: 2N7052 2N7053 CBVK741B019 F63TNR PN2222N
Contextual Info: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

D40K2

Abstract: T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725
Contextual Info: bûE D w Devices V CE0 «ist 2N7051 •e PNP Min 1 20,000 1,000 2N7053 1 2N6725 1 Max 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 4,000 40,000 500 1.5 1A 2mA 100 60,000 1 10,000 10,000 200 1,000 1.5A 0.3 2N5308 0.3 2N6427 1 200 1,000 1.5A 2,000

transistor b54

Abstract: 2N7052 2N7053 NZT7053 small signal transistor
Contextual Info: 2N7052 2N7053 / NZT7053 _ National Discrete POWER & Signal Technologies <ß Semiconductor'" 2N7052 2N7053 NZT7053 SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage.

Contextual Info: R G H Discrete POWER & Signal Technologies II - P SEMICONDUCTOR tm 2N7052 2N7053 NZT7053 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.

2N7051

Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N
Contextual Info: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

2N7051

Abstract: 2N7053 NZT7053
Contextual Info: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

TRANSISTOR 2N7053

Abstract: 2N7052 2N7053 NZT7053
Contextual Info: 2N7052 2N7053 NZT7053 C E C C B B TO-92 SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

T0-202

Abstract: 2n6549
Contextual Info: bflE D Devices Volts Mtn 100 NPN 2N7051 PNP h « @ lc lc Max (Amps) Min 1 20,000 2N7053 1 2N6725 1 mA mA ma 100 1.4 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 15,000 500 1.5 1A 2mA 100 Max 20,000 20,000 P o (A n k) Package TO-92(94) (Watts)

NZT7053

Contextual Info: M ICÜNDUCTQR tm 2N7052 2N7053 NZT7053 SOT-223 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum RâtinÇjS

2N7053

Contextual Info: 2N7052/2N7053 National Juä Semiconductor O T 2N7052 li 2N7053 U TO" 92 V TO-2 2 6 « C 1 T L / G /1 0 1 0 0 - 4 NPN Darlington Transistor Electrical Characteristics ta = 25*c unless otherwise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS V BR CBO

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

Contextual Info: This I tr Material Ln □ N P N D a r lin g to n t-1 b-1 U V Device No. Case Style Copyrighted □ CD •r a jr cr continued ycbo CES V EBO *CBO w By Its 1 @ 1 V C @ CE (mA) (V) V V CE(SAT) (V) Max BE(SAT) & | (V) « c ' m A) lc (MHz) @ Min (mA> Process

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

KST14

Abstract: KST63 BC516 equivalent KSP13 BCV27 KST13 MMBT6427 MMBTA13 MMBTA14 NZT7053
Contextual Info: Discrete Small Signal Darlington Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration PZTA14 30 30 10 1.2 20000 - 5 100 1.5 100 0.1 PZTA28 80 80 12 0.8 10000

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

transistor 2N5952

Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Contextual Info: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also

transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

2N5769

Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
Contextual Info: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A