2N64 Search Results

str f 6454

Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
Contextual Info: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453

2N6476

Abstract: 2N6475
Contextual Info: Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications

2N6488G

Contextual Info: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

2N6490

Abstract: 2N6487
Contextual Info: Product Specification www.jmnic.com 2N6487 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2N6490 APPLICATIONS ・It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION

2N6485

Abstract: 2N6483 X2N6485 2n6485 equivalent 2N64 U401
Contextual Info: _CQIOylC _| _ Dual N-Channel JFET Low Noise Amplifier CORPORATION 2N6483 - 2N6485 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • Ultra Low Noise High CMRR Low Offset Tight Tracking Gate-Source or Gate-Drain Voltage (Note 1) .-50V

2N6465

Abstract: npn 100v 1.5a 2N6466 2N6467 2N6468 2N646 v130100
Contextual Info: Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING see Fig.2

Contextual Info: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0

Contextual Info: B 24 9-97 2N6449, 2N6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • HIGH VOLTAGE Absolute maximum ratings at TA = 25°C 2N6449 -3 0 0 V -2 0 0 V Reverse Gate Drain Voltage -3 0 0 V -2 0 0 V Continuous Forward Gate Current Continuous Device Power Dissipation

LB 124 transistor

Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor

2N6437

Abstract: 2N6339 2N6341 2N6438
Contextual Info: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —

2N6427

Abstract: 2N6426
Contextual Info: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc

2N6426G

Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
Contextual Info: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage

2N6339

Abstract: 2N6340 2N6338 2N6341 2N6436
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier

1N5825

Abstract: 2N6497 MSD6100
Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS

2N6497

Abstract: 2N6499 2N6498
Contextual Info: 2N6497,2N6498,2N6499 NPN ACTIVE-REGION SAFE OPERATING AREA SOA Ic , COLLECTOR CURRENT (Am p) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic- V ce

2N6491

Abstract: 2N6488 2N6489 2N6490 2N6486 2N6487 N648 407f N6486
Contextual Info: Æ & M O S P E C COMPLEMENTARY SILICON PLASTIC PNP 2N6489 2N6490 2N6491 NPN 2N6486 2N6487 2N6488 POWER TRANSISTORS . designed for use in general-purpose amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining VoltageV c e o s u s = 40 v Min) -2N6486, 2N6489

Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2N6465

Contextual Info: 2N6465 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

U3540

Abstract: 2n5039
Contextual Info: 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR File Number SbE ]> • 698 43G2271 GD4044fl STI H H A S High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors lz z 32'-‘/3 Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications

TA8724

Abstract: 2N6248 transistor 2n6246 2N6469
Contextual Info: 2N6246, 2N6247, 2N6248, 2N6469 H A RR IS S E M I C O N D S E C T O R File N u m b e r SbE D 677 I 430 2 57 1 0 0 4 0 5 2 0 3T3 « H A S Silicon P-N-P Epitaxiai-Base, High-Power Transistors TERMINAL DESIGNATIONS General-Purpose Types of Switching and Linear-Amplifier Applications

2N6449

Abstract: CISS2 2N6450
Contextual Info: HIGH VOLTAGE 2N6449 2N6450 SILICON E PI TA X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 5 5 9 , PG. 6 0 TO-39 Package • HIGH BV qss • • •300V MIN 2N6449 • HIGH POWER RATING . . . 5W ELECTRICAL DATA 00370 350dia 0 ^ 1 5 DIA

rca ta8405

Contextual Info: File Number 680 •7 ^ 3 —/ / HARRIS SEMICOND SECTOR 5bE D • 2N6477, 2N6478 4302571 0D405bl Tib H H A S Medium-Power Silicon N-P-N Transistors TERMINAL DESIGNATIONS For Intermediate Power Applications in Industrial and Commercial Equipment F L A N G E

clare mercury relay

Abstract: P609 30343 power 2N6422 2N6421 30343 2N6422 GE
Contextual Info: HARRIS SEMICOND SECTOR SbE ì> 2N6420, 2N6421, 2N6422, 2N6423 4302 27 1 QD4D552 ^03 • H A S File Number 1100 T 3 3 -R High-Voltage Medium-Power Silicon P-N-P Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ High voltage ratings:

2N6463

Contextual Info: 2N6463 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)