2N5557 Search Results

Contextual Info: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0

2N3819 equivalent

Abstract: MPF111 equivalent 2N4220-2 MPF109 2N5556-58 equivalent for 2N3819 2N3819 2N3821-4 2N4223-24 2N5557
Contextual Info: designed for S S ilic o n ix . Perform ance Curves NRL See Section 5 2N5557 • G eneral Purpose Am plifiers 2N5556 n-channel JFETs B E N E F IT S • Low Noise • Low Output Conductance 2N5558 • A B SO LU T E M A X IM U M R A T IN G S at 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) .-30 V

2N5557

Abstract: 2N5558 2n5556
Contextual Info: designed for S . S ilic o n ix Performance Curves NRL See Section 5 2N5557 • G eneral Purpose Am plifiers 2N5556 n-channel JFETs B E N E F IT S • Low Noise • Low Output Conductance 2N5558 • A B SO LU T E M A X IM U M R A T IN G S at 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) .-30 V

pf5102

Abstract: NF5101 PF5101 NF5102 NF5103 2N5556
Contextual Info: NATL National Semiconductor N-Channel JFETs Case Style 2N4393 2N5556 2N5557 2N5558 TO-18 TO-72 TO-72 TO-72 g i. R o!Y f, •dss v GS(off) •gss Vgss <mA) (V) VDS ■d (nA) VDG (V) Vos (mmho) Vos Min (fiA ) Max (V) Min Max (V) (nA) Min Max (V) Min Max (V)

Contextual Info: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5248

Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
Contextual Info: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE

2N4119

Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
Contextual Info: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0

Contextual Info: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj

2n5248

Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE

TP4221

Abstract: BFW12 2SK34 KE4221 2N4221 motorola bf256 2N4220 2sK34 fet
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer 9,. V BR GSS loss (V) (A) Min (S) Max 2.5m 2.5m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m ;3.om 3.0m 3.0m 3.0m 3.0m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2N5458 equivalent

Abstract: pn3685 2N5557 PN4360 2N3820 2N5457 datasheet pn3687 2n3820 noise 2N2608 2N4341
Contextual Info: Junction FETs* Continued Low Frequency/ Low Noise N-Channel TO-18 CASE TYPE NO. Gfs Goss µmho) (mmho) (µ MIN MAX TO-72 2N4220 1.0 TO-72 2N4221 TO-72 V(BR)GSS (V) MIN VGS(off) (V) MIN MAX TO-72 TO-92 Ciss (pF) MAX Crss (pF) MAX IDSS (mA) PIN OUT MIN MAX

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

PN4360

Abstract: pn3687
Contextual Info: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. ReH ^OSl R e n ffsl C |SS c rss IF @ @ TO-92 V BR GSS VGS (O ff) (V y •ds >S PIN OUT (mmho) f Qimho) f <PF> (PF) W ) RG=1K 00 MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

2N5717

Abstract: 2n4303 2N5359 2N5716
Contextual Info: M O M ? ©Ä¥Ä{L© L O W P O W E R FIELD EFFECT T R A N S IS T O R S L s LKJ Type Number LnJ ZA iLb , Case Style (T O - Geometry L r v i/ L N J ^ L a JZA ^ LN J^ Le ^ BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max