2N5558 Search Results

Contextual Info: IN TER F E T CORP 2bE Mfl2bösa o o o o n o ? D T- 9/-&0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi V|0B|GSS Max nA> 2N5556 *30 -1 0 -0 1 -1 5 2N5557 -3 0 -1 0 -0 1 -1 5 2N5558 -3 0 -1 0 -0 1 -1 5 2N6451 -2 0

2N3819 equivalent

Abstract: MPF111 equivalent 2N4220-2 MPF109 2N5556-58 equivalent for 2N3819 2N3819 2N3821-4 2N4223-24 2N5557
Contextual Info: designed for S S ilic o n ix . Perform ance Curves NRL See Section 5 2N5557 • G eneral Purpose Am plifiers 2N5556 n-channel JFETs B E N E F IT S • Low Noise • Low Output Conductance 2N5558 • A B SO LU T E M A X IM U M R A T IN G S at 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) .-30 V

2N5557

Abstract: 2N5558 2n5556
Contextual Info: designed for S . S ilic o n ix Performance Curves NRL See Section 5 2N5557 • G eneral Purpose Am plifiers 2N5556 n-channel JFETs B E N E F IT S • Low Noise • Low Output Conductance 2N5558 • A B SO LU T E M A X IM U M R A T IN G S at 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) .-30 V

pf5102

Abstract: NF5101 PF5101 NF5102 NF5103 2N5556
Contextual Info: NATL National Semiconductor N-Channel JFETs Case Style 2N4393 2N5556 2N5557 2N5558 TO-18 TO-72 TO-72 TO-72 g i. R o!Y f, •dss v GS(off) •gss Vgss <mA) (V) VDS ■d (nA) VDG (V) Vos (mmho) Vos Min (fiA ) Max (V) Min Max (V) (nA) Min Max (V) Min Max (V)

Contextual Info: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5248

Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
Contextual Info: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE

2N4119

Abstract: NF5102 NF5103 2n6449 2N5556 2N5557 2N5558 2N6451 2N6452 2N6453
Contextual Info: INTER F E T CORP 2 bE 4 flSbaöfl D 00001=10 7 T- Ÿ/-& 0 A4 N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at TA - 25 °C VgSioHi Mm V <'<1c (M.AI Conditions Max (nA> 'V GS (V) Mm {V) -1 5 -1 5 -1 5 -0 2 -4 0 15 -0 8 -1 5 -5 0 -6 0 15 1 0

Contextual Info: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj

2n5248

Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n3819

Abstract: bf245b
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

2N5717

Abstract: 2n4303 2N5359 2N5716
Contextual Info: M O M ? ©Ä¥Ä{L© L O W P O W E R FIELD EFFECT T R A N S IS T O R S L s LKJ Type Number LnJ ZA iLb , Case Style (T O - Geometry L r v i/ L N J ^ L a JZA ^ LN J^ Le ^ BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,