BF245B Search Results

BF245B

Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS ±30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate −Source Voltage VGS 30 Vdc ID 100 mAdc IG f 10 mAdc 350

Contextual Info: £Pioducti, me. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 BF245A; BF245B: BF245C U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 N-channel silicon field-effect transistors FEATURES FAX: (973) 375.3960 PINNING • Interchangeabillty of drain and source connections

BF245

Abstract: BF244 JFET BF245 BF245 application note BF245A application notes BF245A BF244B BF244A bf245 equivalent bf245c equivalent
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current

BF245C

Abstract: BF245B BF245A bf245c equivalent BF245C NATIONAL
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

bf245c

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 1996 Jul 30 NXP Semiconductors Product specification BF245A; BF245B; BF245C N-channel silicon field-effect transistors

BF245C

Abstract: BF245B BF245A
Contextual Info: BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage

bf245a

Abstract: bf245b
Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc ID 100 mAdc Forward Gate Current

BF245

Abstract: bf245b BF245C bf245c equivalent BF245A BF245B PHILIPS application notes BF245A MGE786
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

BF245

Abstract: bf245b JFET BF245 BF245A BF245C BF245C JFET
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID 100 mAdc Forward Gate Current

BF245C

Abstract: bf245b BF245A BF-215 application notes BF245A BF245B PHILIPS mqe7 MBH555
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections PIN SYMBOL • Frequencies up to 700 MHz. 1 2 d drain s source APPLICATIONS

JFET BF245

Abstract: BF245 BF244A
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID Forward Gate Current

bf245c

Abstract: BF245A bf245b BF245B Philips Field-Effect Transistors BH553
Contextual Info: Philips Semiconductors Product specification N'Channel silicon field-effect transistors FEATURES BF245A; BF245B; BF245C PINNING • Interchangeability of drain and source connections • Frequencies up to 700 MHz. APPLICATIONS PIN SYMBOL 1 d drain 2 s source

Contextual Info: Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor BVgss Device No. Case Style BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 BF245B BF245C B F 256A BF256B TO-92 TO-92 TO-92 TO-92 2-80 BF256C TO-92 BSR56 TO-236

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

BF245C

Abstract: bf245b bf245c equivalent BF245A
Contextual Info: BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 G S D Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Value

bf245b

Abstract: bf245c equivalent BF245A BF245C MBH553
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

BF245c spice model

Abstract: BF245C bf245b spice model bf245b BF245B spice BF245A spice BF245c spice bf245a bf245c cross reference sc07 catalog
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

tl072 spice

Abstract: D1N4007 QBC547B BF245B spice bf245b spice model inverter using irfz44n 2N5171 SPICE diode 1N750 LTspice 50HZ oscillator sinus vco
Contextual Info: SPICE-SchaltungsSimulation mit LTspice IV Tutorial zum erfolgreichen Umgang mit der frei im Internet www.linear.com erhältlichen SPICEVollversion der Firma Linear Technologies Tutorial-Version 2.2 Copyright by Gunthard Kraus, Oberstudienrat i.R. an der Elektronikschule Tettnang

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

digital TUNING FM RADIO RECEIVER

Abstract: Varicap bb112 OQ8844T varicap bb130 RADIO fm RECEIVER IC UHF TDA1515 FM Receiver Circuits TEA5591A TDA7000 philips ic fm am stereo receiver TDA1013
Contextual Info: INTEGRATED CIRCUITS DATA SHEET Index Functional index 1996 Nov 06 File under Integrated Circuits, IC01 Philips Semiconductors Functional index Index RADIO RECEIVERS AM receivers TDA1072A AM receiver circuit; for car radios TDA1072AT AM receiver circuit; for car radios

2N5459

Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
Contextual Info: Discrete JFETs Products PD VGS off BVGDS Power (V) Dissipation Min (V) Typ (V) Max (V) (mW) IDSS GFS @ ID (uA) @ VDS (V) Min (mA) Max (mA) @ VDS (V) Min (mS) Typ (mS) Max (mS) RDS (Ohm) ID (off) (uA) SOT-223 N-Channel JFTJ105 25 1000 4.5 - 10 1 5 500 - 15

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72