2SK192 Search Results

2SK1928

Contextual Info: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance

Contextual Info: 2SK1920 AP Advanced Performance Series 20 83 A VDss —2 5 0 V 2092A N Channel Power M O S F E T F e a tu r e s • Low ON re sista n c e . • V ery high-sp eed sw itch in g . • Low -voltage d riv e. A b s o lu te M a x im u m R a tin g s a t T a = 25°C

AX-9832

Contextual Info: 2SK1921 AP A d va n ce d P e rfo rm a n c e Series V d 5s = 2 5 0 V N Channel Power M OSFET 4310 F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M axim um R atings atTa=25°C Drain to Source Voltage V d ss

K192a

Contextual Info: T O SH IB A 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure : NF=1.8dB (Typ.) (f=100MHz)

2052B

Abstract: en43-1 EN4310 2SK192
Contextual Info: Ordering num ber:E N 4310 2SK192Í No.4310 N-Channel MOS Silicon FET SA ÍYO i Very High-Speed Switching Applications F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings a tT a = 25°C Drain-to-Source Voltage

2SK192A

Abstract: 2sk192
Contextual Info: 2SK192A TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K1 9 2A FM TUNER APPLICATIONS Unit in mm VHF BAND AMPLIFIER APPLICATIONS 4.2MAX. • High Power Gain : Gpg = 24dB Typ. (f = 100 MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f = 100 MHz)

2092A

Abstract: 250VI 4244A 2092A* High Speed 2SK192 2SK1920 2A1216
Contextual Info: Ordering number : EN4 2 4 4 A 2SK1920 N o.4244A N -Channel M O S Silicon F E T SAXYO Very High-Speed Switching Applications i F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M axim u m R a t in g s a t T a = 25°C

Contextual Info: 2SK1923 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.75 Minimum Operating Temp (øC)-55

2SK192

Contextual Info: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A FM TUNER APPLICATIONS Unit in mm VHF BAND AM PLIFIER APPLICATIONS 4.2 M AX. • High Power Gain : GPs = 24dB Typ. (f= 100MHz) • Low Noise Figure : N F= 1.8dB (Typ.) (f= 100MHz)

Contextual Info: 2SK1925 2056 AP A d va n ce d P e rfo rm a n c e Series V dss = 6 0 0 V IM Channel Power MOSFET 43 U F e a tu r e s • Low ON resistance. • Very high-speed sw itching. •H igh-speed diode (trr= 150ns). b s o lu te M axim u m R a tin g s a tT a = 25°C

431i

Contextual Info: 2SK1922 A P A dvanced Perform ance Series 2052B V dss = 600V N Channel Power M O S F E T E 431I F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode (trr= 100ns). A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage

C085

Contextual Info: 2SK1923 AP A d va n ce d P e rfo rm a n c e Series 2052B DSS = 6 0 0 V N Channel Power M OSFET £4312 F e a tu re s • Low ON resistance. • Very high-speed switching. • H igh-speed diode (trr = 120ns).

2SK1925

Contextual Info: Ordering n u m b er: EN4 3 1 4 2SK1925 No.4314 N-Channel MOS Silicon FjET SAXYO Very High-Speed Switching Applications 1 Features • Low ON resistance. • Very high-speed switching. • High-speed diode trr = 150ns . bsolute Maximum Ratings at Ta = 25°C

2SK1929

Contextual Info: T O SH IB A ‘ÌD 'ÌT S S G T O S H IB A FIELD EFFECT T R A N S IS T O R GD233S3 2SK1929 7DT SILIC O N N C H A N N E L M O S T Y P E tt- M O S II .5 2 S K 1 929 HIGH S PEED , H IG H C U R R EN T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E

2SK1920

Contextual Info: Ordering number:EN4244A N-Channel Silicon MOSFET 2SK1920 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SK1920] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2

2SK1923

Contextual Info: Ordering number:EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode trr=120ns . unit:mm 2052C [2SK1923] 10.2 3.6 4.5 5.1 18.0 15.1

2sk192

Abstract: 2SK192A BL 2SK192A
Contextual Info: TOSHIBA 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 SK19 2A FM TUNER APPLICATIONS U nit in mm VHF BAND AM PLIFIER APPLICATIONS 4.2M AX. • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure : NF = 1.8dB (Typ.) (f= 100MHz)

2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Contextual Info: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo

2092A

Contextual Info: 2SK1920 A P Advanced Perform ance Series 2083A 2092A V dss = 250V N Channel Power MOSFET 4244A F e a tu r e s •Low ON resistance. • Very high-speed sw itching. • Low-voltage drive. A b so lu te M axim u m R a tin g s a tT a = 25°C Drain to Source V oltage

Contextual Info: 2SK1925 AP A d v a n c e d P e rfo rm a n c e Series V dss = 6 0 0 V N Channel Power M OSFET 'I >4314 F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode ( tr r = 150ns). A b so lu te M axim um R a tin g s a tT a = 25°C

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

2SK1920

Abstract: ITR02236 ITR02237 ITR02238 ITR02239 ITR02240 ITR02242
Contextual Info: 注文コード No. N 4 2 4 4 A 2SK1920 No. N 4 2 4 4 A 70999 開発ニューズ No. ※ 4244 とさしかえてください。 2SK1920 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1928 Field Effect Transistor Silicon N Channel MOSType itMOS II High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' ^DS(ON) = 0.7Q (Typ.) • High Forward Transfer Admittance - lYfSl= 10S (Typ.)

EN4310

Abstract: AX-9832 2SK1921
Contextual Info: Ordering number:EN4310 N-Channel Silicon MOSFET 2SK1921 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2052C [2SK1921] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7