BAX13 Search Results

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

BAX13

Abstract: 34696 27293 100-C 5005I
Contextual Info: FAIRCHILD SEMICONDUCTOR fl4 DiF| 3 4 ^ 7 4 84D 27293 3 469674 F A I R C H I L D S E M I C O N D U C T O R A S chlum berger C om pany : BAX13 FA IRCHILD 00572^3 7 r: D ot" High Speed Switching Diode ' PACKAGE BAX13 • C . . . 3 . 0 p F MAX • trr • .4.0 n t (MAX)

FD300 diode

Abstract: BAX13 DIODE BA243 FD333 FD300 DIODE BA244 BA244 BA200 lN914 155pa3
Contextual Info: Sem iconductors Fairchild Sem iconductors Diodes C om puter D iodes B y A sce n d in g trr G la ss p acka g e REFEREN CE T A B L E Code trr nse c M ax. Bv v o lts M in nA M ax lR FD700 FD777 BAX13 BAY71 BAY74 1N914 1N916 1N4148 1N4448 0.7 0.75 4.0 4.0 4.0

Contextual Info: SWITCHING DIODES, GLASS PACKAGE Cent rmou* Forward Capacitance Reverse Rev Peak Voltage C Recovery Package ts i Dissipation Voltage Ctrl rent Drop Maximum Time Quantities Part P. fmW V, Volts) 1. ("A ) V, (Volta) V, (Volts) 1. {mAj Number (PF> T,. (nS) Hulkmeel

FD700

Abstract: DO-35 1N4151 1N4152 1N4153 1N4154 1N4305 1N4376 1N5282 BAY71
Contextual Info: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING trr GLASS PACKAGE DEVICE NO. trr ns Max BV V Min 1 FD700 0.70 30 2 1N4376 0.75 20 3 BAY82 0.75 15 100 12 1.0 4 FD777 0.75 15 100 8.0 1.0 5 1N5282 2.0 80 100 55 1.3 Item Vr V Vf V Max 50 20 1.1 100 10 1.1

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

bav20 itt

Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
Contextual Info: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage

WG713

Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
Contextual Info: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera­ Current l0 at25°C ture Tj Forward Voltage Drop Vf

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: Diode Data NATL SEMICOND DISCRETE HE D | bSGil3Q 003fc,cH ci 4 Computer Diodes Glass Package (continued) . vF Vr r m •r Device Package V @ V nA • Ï No. No. c *ir mA pF M ax ns Max 1N4244 1.0 20 0.8 0.575 0.650 0.710 0.85 0.50 0.61 0.74 0.88 0.95 1.10

do-213ac

Abstract: do213AC BAX13 DIODE 1J 1j diode pro electron DO-35 BAY71 BAV103 BAV19
Contextual Info: This Pro Electron Series Material tr Ln a fcj Discrete POWER & Signal Technologies National Semiconductor ' Pro Electron Diode Series t-* UJ Copyrighted a a a Leaded Switching Diodes j: □ Ln tr1 UJ j: By a V Its Respective Manufacturer , *n <mA> ns

CV9637

Abstract: cv8617 is920 equivalent IS920 cv7332 DO35 DIODE Is44 cv8790 CV7040 CV7875 IN4149
Contextual Info: Approved Products Small Signal Diodes Case Outlines Dimensions are in mm Case outline 1-90 - d ia1 65 -25*4 m inCathode end is denoted by broad colour band Commercial Equivalent Outline Rated VR Rated IF mA V F @ IF V mA DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

BAX13

Abstract: BAX13 equivalent BC548 TDA4861 philips bax13 2N5819 TDA4850 SOT131-2 philips flyback
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA4861 Vertical deflection power amplifier for monitors Product specification Supersedes data of March 1992 File under Integrated Circuits, IC02 1997 Jan 20 Philips Semiconductors Product specification Vertical deflection power amplifier for

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

DIODE BA244

Abstract: 1n4148 ITT 30M5R DIODE BA243 BA244 ITT 1N4150 155pa3 BA243 BAX13 ITT44
Contextual Info: ITT Sem iconductors Diodes Epitaxial Pianar Diode Sw itches R E F E R E N C E T A B L E . Forr.f. bandsw itching up to 1000 M H z Code Switching Band V BH| min. V R F max. at l F O mA C max. pf BA243 B A244 VHF UHF 20 20 1.0 0.5 2 2 10 10 at V„ V Outline

in5282

Abstract: bax13 1N3064 1N3600 1N4009 1N4148 1N4149 1N914 J 1N4151 1N914B
Contextual Info: SWITCHING DIODES, GLASS PACKAGE Continuous liiS il! N um ber a m W Vi„IVqH s> C a p a c ita n ce R e v e r s e C. R e c o v e ry PatKaga Time Quantities Maximum Forw ard Voltage Drop Pow er Dissipation l É s i s g f í í i, in A) V (V o lts) V (V o lt 1 1 (mA|

CECC 50001

Abstract: BAV21 CECC WG713 1N45BA 1N483A Diode BA170 BA201 BAV17 BAV18 BAV19
Contextual Info: General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Junction Forward Max. Aver, Power Rectified Dissipation Tempera­• Voltage ture Tf Current l0 at25°C Drop Vf Reverse Current lR at lF Reverse RecoveryTime atv„ Volts mA max.mW max.°C

DO213AC

Abstract: DO-213AC DIODE 1J DO-35 BAY19 bay82
Contextual Info: OETTOS^ Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor" Pro Electron Diode Series ETiïOhOO Leaded Switching Diodes V Min (nA) Min V,m (V) Max BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62

TFK 1n4148

Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
Contextual Info: VISHAY ▼ Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Although every effort has been made to assure accurate and reliable substitutions, Vishay Telefunken assumes

BCY87

Abstract: BAX13 BCY88 "dual TRANSISTORs" philips bax13 2N930 BCY71 BCY89 BAX13 equivalent
Contextual Info: N AUER PHILIPS/DISCRETE m 1^53^31 D0E7bbD 112 HIAPX L^E D BCY87 to 89 N-P-N SILICON PLANAR DUAL TRANSISTORS FOR DIFFERENTIAL AMPLIFIERS Matched dual n-p-n transistors in a TO-71 metal envelope with all leads insulated from the case. T hey are prim arily intended for differential am plifier applications in general industrial service; e.g.

BAS3590

Abstract: BAY71 BA128 BA129 BA130 BA217 BA218 BA316 BA317 BA318
Contextual Info: National Semiconductor NATL Âæ Diode Pro Electron Series 75 200 30 30 50 10 30 50 100 50 100 50 50 200 200 200 1.0 1.0 1.0 1.0 1.0 0.85 0.85 0.85 50 100 10 10 10 10 10 10 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 75 100 150 200 90 90 90 1000 100 100 100