BAY82 Search Results

10 35 DIODE

Abstract: BA217 BAY71 BY 236 BA128 BA129 BA130 BA218 BA316 BA317
Contextual Info: NATL SEMICOND DISCRETE 11E D I b S D llB Q UÜ37 Jib! 4 m This Material Copyrighted By Its Respective Manufacturer This Diode Pro Electron Series Material z > Diode Pro Electron Series Continued Part No. Copyrighted BAY19 BAY71 BAY72 BAY73 BAY74 BAY80 BAY82

fdh900

Abstract: FD700 BAY74 BAY82 FD777 FDH600 FDH666 FDH999 do7 15
Contextual Info: NATL SEMICONO D IS C R E TE HE D t.5 G 1 1 3 0 I Computer Diodes Glass Package (Continued) V rrm •r vF D evice Package Vr No. V Min BAY74 DO-35 BAY82 FD700 No. FD777 nA @ Max V 50 100 DO-7 15 DO-7 30 DO-7 15 £ T-01-01 c I 'a mA pF Max *rr ns Max Test

FD700

Abstract: DO-35 1N4151 1N4152 1N4153 1N4154 1N4305 1N4376 1N5282 BAY71
Contextual Info: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING trr GLASS PACKAGE DEVICE NO. trr ns Max BV V Min 1 FD700 0.70 30 2 1N4376 0.75 20 3 BAY82 0.75 15 100 12 1.0 4 FD777 0.75 15 100 8.0 1.0 5 1N5282 2.0 80 100 55 1.3 Item Vr V Vf V Max 50 20 1.1 100 10 1.1

1N4376

Abstract: 1N4244 BAY82 BAV82
Contextual Info: FAIRCHILD SEMICONDUCTOR ' fl4 DE | 3 4 ^ 7 4 3469674 FA IR C H I L D S E M I C O N D U C T O R F A IR C H IL D Q Q 5 7 ^ fl 84D 27299 BAY82/1N4244 T 0 2 D • qo^ A Schlumberger Company Ultra Fast Switching Diodes PACKAGES. BAY82 1N4244 1N4376 • t f f . ,75 0 ps MAX

fdh900

Abstract: BA217 BA216 FD777 1N4151 1N4152 1N4153 1N4154 1N4305 1N4376
Contextual Info: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING trr GLASS PACKAGE DEVICE NO. trr ns Max BV V Min 1 FD700 0.70 30 2 1N4376 0.75 20 3 BAY82 0.75 15 100 12 1.0 4 FD777 0.75 15 100 8.0 1.0 5 1N5282 2.0 80 100 55 1.3 Item Vr V Vf V Max 50 20 1.1 100 10 1.1

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

do-213ac

Abstract: do213AC BAX13 DIODE 1J 1j diode pro electron DO-35 BAY71 BAV103 BAV19
Contextual Info: This Pro Electron Series Material tr Ln a fcj Discrete POWER & Signal Technologies National Semiconductor ' Pro Electron Diode Series t-* UJ Copyrighted a a a Leaded Switching Diodes j: □ Ln tr1 UJ j: By a V Its Respective Manufacturer , *n <mA> ns

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

DO213AC

Abstract: DO-213AC DIODE 1J DO-35 BAY19 bay82
Contextual Info: OETTOS^ Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor" Pro Electron Diode Series ETiïOhOO Leaded Switching Diodes V Min (nA) Min V,m (V) Max BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62

Contextual Info: NATL SEMICOND DISCRETE H E D Computer Diodes Glass Package (Continued) V rrm vF • r Device Package Vr No. No. V Min nA @ Max V V I (□501130 T-01-01 c Min Max 0037 000 5 'a mA I O o a <o pF Max *rr ns Max Test Cond. Proc. No. BAY74 DO-35 50 100 35

1S920

Abstract: 1n4150 sot-23 BAY71 MMB0914 1N916 1N916B 1S921 D0-35 FDLL4148 FDLL4448
Contextual Info: h ô L D. • Silicon Single Junction Diodes continued bSOHBG NATL SEMICOND Vrrm (Volts) Min 100 80 75 Device VFM @ IF l«r I rrm (nA) (ns) (Volts) (mA) Max Max Max Package* 1N916 25 1.0 10 4.0 DO-35 1N916B 25 1.0 30 4.0 DO-35 (Volts) Min 75 70 DO-35 200

BAS3590

Abstract: BAY71 BA128 BA129 BA130 BA217 BA218 BA316 BA317 BA318
Contextual Info: National Semiconductor NATL Âæ Diode Pro Electron Series 75 200 30 30 50 10 30 50 100 50 100 50 50 200 200 200 1.0 1.0 1.0 1.0 1.0 0.85 0.85 0.85 50 100 10 10 10 10 10 10 BAS16 BAS19 BAS20 BAS21 BAS29 BAS31 BAS35 75 100 150 200 90 90 90 1000 100 100 100

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

100414DC

Abstract: 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB fairchild rtl FSA2501
Contextual Info: FAIRMONT ELECTRONICS PTY. LTD. TE L.48-6421 4 8 -6 4 8 1 /2 /4 C AB LES ' FAIRTRONICS' C R A IG H A L L T E L E X 8-3227 S A . P O .BOX 41102, C R A IG H A LL 2024. I ouani v-ox 39! 262Bramley 2018 FAIRCHILD 464 Ellis Street, M ountain View, C alifornia 94042

BAS 20 SOT23

Abstract: BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71 1N916 1S921 FDLL4148
Contextual Info: Vrrm Volts Min 100 80 75 VFM @IF rr (ns) Package* (nA) (Volts) (mA) Max Max Max Ir r m Device 10 4.0 1.0 30 4.0 1.2 200 bsoiiao Düaqsoa 3t.T V RRM (Volts) Min 75 DO-35 Device ilf b fiL D . Silicon Single Junction Diodes (continued) mnscs Vm @lF 1* (ns) Package*

SN72710L

Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any