BA130 Search Results

25X1

Abstract: MD10N1 MD15N1 MD20N1
Contextual Info: ISJ Z J± MD r ORIGIN • it * X S IL IC O N H IG H V O L T A G E R E C T IF Y IN G D IO D E S l . 2. ELECTRIC CO L TD SfiE D $ '< *7 i. U '— - 1 p - f w g s s a i , • ^ i § T a = 2 5 t : , >£40 I bA13074 ► 3 kV~20kV > 2 0 m A ~ 8 0 m A (5É41 ODD0050

Contextual Info: Standard ICs Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high current transistor array consisting of six circuits of Darlington transistors. Because it incor­ porates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such

BA13002F

Abstract: 50VlN
Contextual Info: Standard ICs Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high current transistor array consisting of six circuits of Darlington transistors. Because it incor­ porates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such

Contextual Info: Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high c u re n t transistor array consisting of six c rcuits of Darlington transistors. Because >t mcoipcrates built-in surge-absorbing diodes and basa current-controi resistors needed when using inductive leads such

schlumberger

Abstract: BA128 BA130 A130
Contextual Info: FAIRCHILD SEMICONDUCTOR ” ~ fi4 D E | 34fc.Tb74 0057564 b j ~ T fa ir c h ilB BA128/BA130 *. Mi l A Schlumberger Company General Purpose Diodes PACKAGES BA128 BA130 • W IV. .50 V BA128 , 25 V ( BA130) • ln .100nA (M AX )@ WIV _ 47 DO-35

Contextual Info: Standard ICs Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high current transistor array consisting of six circuits of Darlington transistors. Because it incor­ porates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such

Contextual Info: BA13002F-E2 IL08 TRANSISTOR ARRAY —TOP VIEW— STB 1 16 VCC IN1 2 15 OUT1 IN2 3 14 OUT2 IN3 4 13 OUT3 IN4 5 12 OUT4 IN5 6 11 OUT5 IN6 7 10 OUT6 GND 8 9 COM

BA13002F

Abstract: DARLINGTON SINK DRIVER
Contextual Info: Standard ICs Interface driver for microcomputer peripheral and display devices BA13002F The BA13002F is a high current transistor array consisting of six circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such

si 13001 transistor

Abstract: transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF transistor x 13001 TRANSISTOR si 13001 13001 TRANSISTOR transistor s 13001
Contextual Info: BA13001 /BA13001F/BA13002/BA13002F B A 1 3 0 0 1 / B A 1 3 0 0 1 F B A 1 3 0 0 2 / B A 1 3 0 0 2 F • 7 -r -f □ - 7 i - X Interface Driver for Microcontroller Peripherals and Displays • i f E l / D i m e n t i o n s Unit : mm BA13001, B A 13002, BA13001F, B A 13002F IJ,

ba13002f

Abstract: 2U diode
Contextual Info: BA13002F Driver, 6-channel, high current The BA13002F is a high current transistor array consisting of six Darlingtonconfigured transistor circuits. Dimensions Units : mm BA13002F (SOP16) The necessary surge-absorbing diodes and base current-control resistors are

transistor x 13001

Abstract: c s 13001 TRANSISTOR diagram transistor 13001 BA13002 transistor c s x 13001 all transistor 13001 transistor s 13001 c s x 13001 H 06 BA13002F A13001
Contextual Info: BA13001 /B A 13001F/BA13002/BA13002F BA1 3 0 0 1 / B A 1 3 0 0 1 F BAI 3 0 0 2 / B A 1 3 0 0 2 F Interface Driver for Microcontroller Peripherals and Displays • Dimentions Unit : mm The BA13001, BA13001F, BA13002, and BA13002F are large current transistor arrays with 6 Darlington

transistor A62

Abstract: 9709K darlington buffer array A634 DIP18 S0P16 BA12003 A6257 sink 8 low darlington array BA614
Contextual Info: lumm Transistor array Number Output Max.vdtage Output current mA of CHS (V) BA612 5 BA6256 B A664 6 BA13001F hput/output type Input active Output current Circuit level construction type Package Feature 24 450 25 Invert H Sink Darlington DIP14 24 100 25 Invert

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

Contextual Info: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised

Contextual Info: DALLAS SEMICONDUCTOR DS2251T 128K Soft Microcontroller Module FEATURES PACKAGE OUTLINE • 8051 compatible microcontroller adapts to its task o - 32K, 64K, or 128K bytes of nonvolatile SRAM for program and/or data storage - In-system programming via on-chip serial port

BA102

Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Contextual Info: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.

BA102

Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
Contextual Info: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for

K8P2815UQB

Contextual Info: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

samsung ba92

Abstract: BA137 k8p3215
Contextual Info: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

diode ba102

Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
Contextual Info: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory