BSR56 Search Results

marking ZS SOT-23

Abstract: marking M2 JFET BSR56
Contextual Info: SILICONIX INC ÎÔE D • 0254735 0G13öbT 7 ■ BSR56 SERIES J 7 IS S & 1 T-35-Z.S N-Channel JFETs The BSR56 Series Is a n-ohannel JFET mounted in our popular SOT-23 package, Its low cost and c d s ON make It a good choice for an all-purpose analog switch, while Its high gfa' and good

BSR56

Abstract: BSR57 BSR58
Contextual Info: BSR56 BSR57 BSR58 TllDflSb OObTSbS TT5 « P H I N J V . N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.

marking wh sot-23

Abstract: BSR56 BSR56L BSR57 BSR57L BSR58 BSR58L BSR67 DIODES MARKING M5
Contextual Info: M O T O R O L A SC XSTRS/R F 12E 0 | b3 t ? a S M O G a t t a ? 4 | M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage —VDS 40 V Drain-Gate Voltage V dg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L

BSR58

Abstract: BSR56 BSR57 sot23 marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel

BSR56

Contextual Info: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted

BSR56

Contextual Info: BSR56 BSR57 BSR58 ? 1 1 0 ß S b Q Q b T S b S TTS « P H I N 7 V N-CHANNEL FETS Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic m icrom iniature envelope intended for application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.

BSR56

Abstract: BSR57 BSR58
Contextual Info: BSR56 BSR57 BSR58 TllDflSb O O b T S b S TT5 • PHIN N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.

Contextual Info: Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor BVgss Device No. Case Style BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 BF245B BF245C B F 256A BF256B TO-92 TO-92 TO-92 TO-92 2-80 BF256C TO-92 BSR56 TO-236

BSR57L

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3t.7aS4 aOôtbû? 4 | X'ZS' M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage ^ V ds 40 V Drain-Gate Voltage Vdg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L CASE 318-03, STYLE 10

BSR56

Contextual Info: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel

BSR56

Contextual Info: BSR56 BSR56 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M4 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted

BSR56

Contextual Info: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.

BSR57

Abstract: BSR56
Contextual Info: BSR56; BSR57; BSR58 N-channel FETs Rev. 3 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors FETs in a plastic microminiature envelope designed for application in thick and thin-film circuits. The

BSR56

Abstract: BSR58 BSR57
Contextual Info: • bbsa'm 00255^ BSR56 BSR57 BSR58 311 ■ APX N AMER PHILIPS/DISCRETE b7E D N-CHANNEL FETS Symm etrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for lowpower, chopper or switching applications in industrial service.

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

2N5459

Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
Contextual Info: Discrete JFETs Products PD VGS off BVGDS Power (V) Dissipation Min (V) Typ (V) Max (V) (mW) IDSS GFS @ ID (uA) @ VDS (V) Min (mA) Max (mA) @ VDS (V) Min (mS) Typ (mS) Max (mS) RDS (Ohm) ID (off) (uA) SOT-223 N-Channel JFTJ105 25 1000 4.5 - 10 1 5 500 - 15

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2n4392 SPECIFICATION

Abstract: SST4856 BSR58 equivalent SST4092 VCR2N equivalent SST4857 2N4858 equivalent SST4860 2N4856 SILICONIX SST4858
Contextual Info: Siliconix incorporated HIGH GAIN JFET AMPLIFIERS Cont'd en 'DSS PART# V(BR)GSS (V) MIN MAX (mA) 'GSS (PA) 9fs 9 os (mS) (nS) C| SS (PF) C rs s (PF) 7 12 12 12 13 13 13 12 12 12 3 3.5 3.5 3.5 3.5 3.8 4 3.5 3.5 3.5 4 3 3 3 3 3 3 3 3 3 1 1 1 4 4 4 3.5 3.5 3.5

fr5 transistor

Abstract: bfs17 Motorola transistor SOT23 w7 BSR56 motorola MN transistor BFS17 BSR57 BSR58 BSS63 BSS64
Contextual Info: n O T O R O L A SC Í X S T R S / R 6367254 F> W|b3b?5SM "Tt MOTOROLA SC XSTRß/R OüantM 96D 8 1 9 6 4 F D r - 3 h / s M A X IM U M R A TIN G S Sym bol Value U nit Collector-Em itter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 25 Vdc Sym bol Max U nit