0G17T Search Results

Contextual Info: G E SOLI» STATE 01 3875081 G E SOLID DE~| 3075001 0G17T=ia S STATE 01E 17992 Signal Transistors- D T ' i i - n MPS-A65 Silicon Darlington Transistors TO-92 T h e G E /R C A M PS-A 65 is a planar epitaxial passivated PN P silicon Darlington transistor designed for pream plifier input

MPS-A65

Contextual Info: G E SOLI» STATE Öl 3875081 G E SOLID » F | 3fl75Dfll 0G17TTE S STATE 01E 1 79 92 D T ' I I - Z l Signal Transistors- MPS-A65 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 6 5 is a p lan ar epitaxial passivated P N P

BUX97B

Abstract: BUX97 rca 632 BUX97A
Contextual Info: Ïïï 3875081 G E SOLID STATE »^3075001 01E 17625 0G17t. ES D Pro Electron Power Transistors _ 'F ile N u m b e r 1288 BUX97, BUX97A, BUX97B High-Voltage, High-Pow er, •Silicon N -P -N

Contextual Info: TOSHIBA DISCRETE/O PTO TO S H IB A TR A N S IS TO R 45E D • 1 O -]72S0 0G17T12 b «T O S 4 YTS2222A SILICON NPN EPITAXIAL T Y P E (PCT PROCESS) -~J~ 7 Í | _ l S FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO +0.5 2.5-Û3 VHF FREQUENCY APPLICATION

Contextual Info: y *u % U N IT R D D E UC1625 UC2625 UC3625 Brushless DC Motor Controller FEATURES DESCRIPTION • Drives Power MOSFETs or Power Darlingtons Directly The UC3625 family of motor controller ICs integrate most of the functions required for high-performance brushless DC motor con­

Contextual Info: y _ UCC2751 UCC3751 UNITRODE Single Line Ring Generator Controller PRELIMINARY FEATURES DESCRIPTION • Novel Topology for Low-Cost, Efficient Generation of Ring Voltage • Provides DC Offset and “Talk Battery” Voltage for Off-Hook Conditions • Selectable 20,25 and 50 Hz Ring

32-PIN

Abstract: A10E MSM51V16900-70 MSM51V16900-80
Contextual Info: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.

Contextual Info: DS87C530 PRELIMINARY DALLAS SEMICONDUCTOR D S87C 530 EPRO M Micro with Real Time Clock FEATURES PACKAGE OUTLINE • 80C52 Compatible - 8051 Instruction set - Four 8-bit I/O ports - Three 16-bit timer/counters - 256 bytes scratchpad RAM • Large On-chip Memory

HC2000H

Abstract: RCA HC2000H RCA-HC2000H AN-4483 HC2000 2000 PWM hybrid AN4483 SOLID STATE AUDIO AMPLIFIERS RCA Solid State Power Transistor RCA Solid State amplifier
Contextual Info: G E SO LI D 3875081 ST AT E Dl D E I 3Ö7S0Ö1 G E S O L I D ST AT E Pow er Hybrid C irc u its _ ' .HC2000H DG17t.SE 3 01E 17652 D ~7^7?-JF3 File Number 566 Multi-Purpose 7-Ampere . Operational Amplifier Linear Amplifiers for Applications in Industrial

Contextual Info: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.

Contextual Info: UCC3626 o U N IT R Q D E Brushless DC Motor Controller ADVANCED INFORMATION FEATURES DESCRIPTION • Two Quadrant and Four Quadrant Operation • Integrated Absolute Value Current Amplifier • Pulse-by-Pulse and Average Current Sensing • Accurate, Variable Duty Cycle