500RAA Search Results
500RAA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PCI LM7900 Series 3-Terminal Negative Output Voltage Regulators Semiconductor J FEATURES [ PIN ARRANGEMENT • No External Components Required • Internal Thermal Overload Protection • Internal Short-Circuit Current Limiting • Output Transistor Safe-Area Compensation |
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lm7900 | |
LB1649
Abstract: LB1669 L8166 LB1614 ooka l01649 L0164 EN1571B
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en1571b157iblb1649lb1669+5 | |
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Contextual Info: B IPO LA R LIN E A R INTEG RATED CIRCUIT SILICO N MONOLITHIC T A <7 Q n n C P IH / T A^QHO A D v U U v l I f l f V U £ T f 1A THREE TERMINAL NEGATIVE VOLTAGE REGULATORS -5V, -6V, -8V, -9V, -10V, -12V, -15V, -18V, -20V, Unit in mm -24V 1 QS MAX 0&6±az • Suitable for C-MOS, TTL, and the other Digital |
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o-220abta79005pta79006pta79008p+6 | |
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Contextual Info: TA7733F TENTATIVE Unit FUNCTIONAL BRIDGE DRIVER. - FEATURES: . Wide Operating Supply Voltage Range. . Capsealded in Flat Package 16 pin. . Forward and Reverse Rotation, Short Brake Modes are Available by Means of Rotation Control Signals. . High Efficiency is Obtained. |
OCR Scan |
ta7733f-25ma-500ma-500raa | |
BD135-BD137-BD139
Abstract: bd139 BD139 amplifier BD139I st BD139 BD135,BD137,BD139 BD135 Toshiba Bd135 st BD137 toshiba
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bd137bd139ibd136bd138+10 | |
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Contextual Info: 2N3107 z * ’“ - th ro u g h 2N3110 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ¥ X ''«SS« »W v. I CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS |
OCR Scan |
2n31072n31102n40322n4030+3 | |
2SD1618
Abstract: 2SB1118 PF140S
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1784b2sb1118/2sd16182sb11182sd1618+1 | |
YTS2222Contextual Info: TOSHIBA TRANSISTOR YTS2222 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm +as Z S -Û 3 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION +Û2 3 ¿S-Q15. HO d <3 FEATURES: +i . DC Current Gain Specified : 0.1— 500mA |
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yts2222500mas-q15500raa+5 | |
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Contextual Info: TOSHIBA DISCRETE/O PTO TO S H IB A TR A N S IS TO R 45E D • 1 O -]72S0 0G17T12 b «T O S 4 YTS2222A SILICON NPN EPITAXIAL T Y P E (PCT PROCESS) -~J~ 7 Í | _ l S FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO +0.5 2.5-Û3 VHF FREQUENCY APPLICATION |
OCR Scan |
0g17t12yts2222a500ma500raa+4 | |
bc182c
Abstract: t092 BC182LC BC237B bc182l T0-92 bc186 BC212
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0ggg032bc182bbc182cbc182l+11 | |
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Contextual Info: i, fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2905 TO-39 2W2905 are PNP silicon planar epitaxial transistors. It is intended for driver stage of power amplifiers and switching applications. |
Original |
2n29052w2905-150ma-15ma+1 | |
2N3107
Abstract: 2N3108 2N3109 2N3110 2N4030 2N4032 2n31
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OCR Scan |
2n31072n31102n40322n4030+6 |