YTS2222 Search Results

Contextual Info: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125

YTS2222

Contextual Info: TOSHIBA YTS2222 Transistor Unit in mm Silicon NPN Epitaxial Type + Q5 as-a3 For General Purpose Use + Q25 <n Medium-Speed Switching and Audio to w o ö d + 1 VHF Frequency Application Features • D C Current Gain Specified €E- - 0.1 - 500mA • Low Collector-Emitter Saturation Voltage

YTS2222A

Contextual Info: TOSHIBA YTS2222A Transistor U n it in m m Silicon NPN Epitaxial Type For General Purpose Use Medium-Speed Switching and Audio to VHF Frequency Application Features • DC Current Gain Specified - 0.1 - 500mA • Low Coilector-Emitter Saturation Voltage - Vqe sat = 1 -60V (Max.) @ Iq = 500mA, lB = 50mA

YTS2222

Contextual Info: TOSHIBA TRANSISTOR YTS2222 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm +as Z S -Û 3 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION +Û2 3 ¿S-Q15. HO d <3 FEATURES: +i . DC Current Gain Specified : 0.1— 500mA

Contextual Info: TOSHIBA DISCRETE/O PTO TO S H IB A TR A N S IS TO R 45E D • 1 O -]72S0 0G17T12 b «T O S 4 YTS2222A SILICON NPN EPITAXIAL T Y P E (PCT PROCESS) -~J~ 7 Í | _ l S FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO +0.5 2.5-Û3 VHF FREQUENCY APPLICATION

YTS2222A

Abstract: YTS2222 YTS2221
Contextual Info: SILICON NPN EPITAXIAL TYPE YTS2222A FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION. MIDIUM-SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATIONS. • • • • DC Current Gain Specified : 0.1~500mA Low Collector-Emitter Saturation Voltage : V cE sat = 1.0V(Max.) @Iq = 500mA, Ig = 50mA

YTS2221

Abstract: YTS2222
Contextual Info: YTS2222 SILICON NPN EPITAXIAL TYPE Unit in mm FOR GENERAL PURPOSE USE + 0.5 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATION FEATURES: • DC Current Gain Specified : O.l^SOOmA • Low Collector-Emitter Saturation Voltage : VCE sat =1.6V(Max.)

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

ICA10

Abstract: YTS2907A 150fps
Contextual Info: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

YTS2906A

Abstract: YTS2221 150PPS
Contextual Info: SILICON PNP EPITAXIAL TYPE YTS2907A Unit in mm FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION, + 0.5 MID1UM-SPEED SW ITCHING A N D A U D IO TO VHF AMPLIFIER 2 .5 - a s APPLICATIONS. + Û 25 i.5 ~ a i5 HO +I tfc5 DC Current Gain Specified : —0.1~ —500mA

transistor marking MK

Abstract: YTS2222
Contextual Info: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ÌQ'msa • TOSHIBA TRANSISTOR 0017=^7 S « T 0 S 4 - YTS2907A SILICON PNP EPITAXIAL TYPE (PCT PROCESS) FOR HIGH SPEED SWITCHING USE Unit in mm +QS Z 5-Q 3 +<Ï2 S DC TO VHF AMPLIFIER APPLICATIONS AND

YTS2906

Abstract: YTS2222 YTS2221
Contextual Info: SILICON PNP EPITAXIAL TYPE YTS2907 Unit in mm FOR GENERAL PURPOSE USE + 0.5 MEDIUM SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATION FEATURES: • High DC Current Gain Specified : -0.1 ^-500mA • High Transition Frequency : fT=200KHz Min. @ Ic=-50mA

Contextual Info: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60

BF189

Abstract: NT2222 BSY21 TP3300 BF234 bf310 JE9101A 2sc2787l PE254 PE254C
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO , 5 10 15 20 25 30 35 40 45 50 55 60 70 75 80 85 90 fr (V) (Hz) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 3U 30 30 30 30 30 30 30 30 30 ~~~;~P ~eelnoex BC413P BC413C BC413CP GES2221

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

YTS2222

Contextual Info: TOSHIBA YTS2907 Transistor Unit in mm Silicon PNP Epitaxial Type For High-Speed Switching Use DC to VHF Amplifier Applications and Complementry Circuitry Features • High DC Current Gain Specified - 0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min.

TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738

TIPI27

Contextual Info: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0