YTS3905 Search Results

YTS3905

Abstract: YTS3903
Contextual Info: SILICON PNP EPITAXIAL TYPE YTS3905 FOR GEN ERA L P URPOSE USE S WIT C H I N G AN D A M PLI FIE R APPLICATIONS. FEATURES: • L o w Leak a g e Current • I c E V = _ 5 0 n A M a x . * I]3EV= 5 0 n A ( M a x . ) @ V c b =-30V, V b e =3V • E xcellent DC Current G a i n L inearity

TIPI27

Contextual Info: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

yts3903

Abstract: N916 IC-10PA
Contextual Info: YTS3903 SILICON NPN EPITAXIAL TYPE Unit in m m FOR GENERAL PURPOSE USE S W ITCHING A N D AMPL I F I E R + 05 APPLICATIONS. FEATURES: • L o w Leak a g e Current : ICEy = 5 0 n A M a x . , IE g y = - 5 0 n A ( M a x . ) @ V C E =30V, V b e =-3V • Excellent DC Current G a i n L i n e a r i t y

Contextual Info: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60

YTS2222A

Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Contextual Info: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60

BF681

Abstract: BF272 BF272A BC116 KT361G BF679 BFR38 KT361E BF509 LOW-POWER SILICON PNP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 30 ~~~~~ +~~~~~~~EFC BFR38 BFR38 BF516 BF272A BF272A BF272S BF970A BF970A MPS4248 MPS4248 IMBT3905 2SA523A 2N2904 2N2906 PN2904 SF220 NthAmerSemi Semelab NthAmerSemi SGS•Ates NthAmerSemi