YTS4125 Search Results

YTS4125

Abstract: A 1HF
Contextual Info: SILICON PNP EPITAXIAL TYPE YTS4125 U n i t in m n FOR GENERAL PURPOSE USE SWITCHING AND A MPLIFIER + 0.5 Í . 5 - 0.3 APPLICATIONS. + 0.25 ,1 5 -0 1 5 FEATURES: EE • Low Leakage Current : I ^ g Q = - 5 0 n A M a x . IE B O = _ 5 0 n A (Max.) @ Vjng=-20V

BC213K

Abstract: LOW-POWER SILICON PNP 2SA102 250m40 BC388
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 2SA495 BC388 BFW31 TMPT4125 YTS4125 A5T4125 FMMT4125 MMBT4125 MMBT4125 MMBT4125 4 2N4125 2SA594 2SA594 2SA594 2SA732 TEC8012D TEC8012D 2SA1182 BC213K >= Manufacturer See Index See Index

YTS4126

Abstract: YTS4403 YTS4125 YTS4124 YTS4401 YTS4123 YTS4400 YTS4402 sc 005 04
Contextual Info: - 350 - 1 1 T a = 2 5 tC . * E P f i T c = 2 5 t 5 m % m m VcBO Vceo (V) (V) ÍCC DC) (A) Pc Pc* iCBO (max) Vc b (W) (W) (ilk) (V) YTS4124 M 2 G A/SW 30 25 0. 2 0.2 0.05 20 YTS4125 M 2 G A/SW -30 -2 5 -0.2 0.2 M2 M2 M2 M2 M2 G A/SW -25 - 25 -0.2 0 .2 -0.05

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60

YTS4123

Abstract: YTS4125
Contextual Info: YTS4123 SILICON NPN EPITAXIAL TYPE FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: • Low Leakage Current : I^gQ=50nA Max. IEBO=-’0nA (Max.) @ V q B=20V @ V e b =3V • Low Saturation Voltage : vCE(sat)=0-3v(Max-) @ Ic=50mA, IB=5mA

TIPI27

Contextual Info: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0

YTS2222A

Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Contextual Info: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60