2SA1182 Search Results

Contextual Info: 2SA1182 TOSHIBA 2 S A 1 1 82 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AU D IO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hpE Linearity : hFE( 2) = 25 (Min.)at V ce = —6V Ic = —400mA

Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1182

Abstract: 2SC2859
Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) • Complementary to 2SC2859.

Contextual Info: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : • Complementary to 2SA1182. Unit: mm hFE (2) = 25 (min)

Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER

Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1182

Abstract: 2SC2859
Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1182

Abstract: 2SC2859 A1182
Contextual Info: 2SA1182 TO SH IBA 2 S A 1 182 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 2 . 5 - 0.3 SWITCHING APPLICATIONS + 0.25 k1-5 - ° - 15>i • ; UJ?'E (2) ”

marking 1301 sot-23

Abstract: sot-23 Marking zy 2SA1182 zy marking sot23 1301 sot marking zo sot -6
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SA1182 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT-23 package 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector

Contextual Info: 2SA1182 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1182 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = −6 V, IC = −400 mA)

Contextual Info: Product specification 2SA1182 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT-23 package 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

2SA1182

Abstract: 2SC2859
Contextual Info: 2SA1182 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1182 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小) (VCE = −6 V, IC = −400 mA)

BC213K

Abstract: LOW-POWER SILICON PNP 2SA102 250m40 BC388
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 2SA495 BC388 BFW31 TMPT4125 YTS4125 A5T4125 FMMT4125 MMBT4125 MMBT4125 MMBT4125 4 2N4125 2SA594 2SA594 2SA594 2SA732 TEC8012D TEC8012D 2SA1182 BC213K >= Manufacturer See Index See Index

Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA 1182 DATA SILICON PNP EPITAXIAL PCT PROCESS (2SA1182) AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • • Excellent hpE Linearity

Hpcl

Abstract: 2SC2859
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1182 AUDIO F RE QUE NC Y LOW POWER AMPLIFIER Unit in mm APPLICATIONS DRIVER + Q6 STAGE AM PLIFIER 2 .5 — 0 .3 APPLICATIONS + Ü25 SWITCHING L5-a 0 APPLICATIONS FEATURES: . Excellent hpg Linearity: lipjj 2 )= 2 5 (Min .) at Vce=-6v Ic=-400mA

2SA1182

Abstract: 2SC2859
Contextual Info: 2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

Contextual Info: 2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial PCT process 2SC2859 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : IC = 400 mA) • Complementary to 2SA1182. Unit: mm

2SA1182

Abstract: 2SC2859 A1182
Contextual Info: TOSHIBA 2SA1182 2 S A 1 182 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AUDIO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS DRIVER STAGE AM PLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hjpg Linearity : ^FE (2) —25 (Min.) at V ce — —6V Iq = —400 mA

Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2859 A U D IO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS. U n it in m m DRIVER STAGE AM PLIFIER APPLICATIONS. + 0.5 - 0.3 + 0.25 . 1.5 - 0.15 SW ITCH IN G APPLICATIONS. • • 25 Excellent hpE Linearity : hFE 2 = 25(Min.) (V qe = 6V, Ic = 400mA)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.