YTS2907 Search Results

ICA10

Abstract: YTS2907A 150fps
Contextual Info: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency

YTS2906A

Abstract: YTS2221 150PPS
Contextual Info: SILICON PNP EPITAXIAL TYPE YTS2907A Unit in mm FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION, + 0.5 MID1UM-SPEED SW ITCHING A N D A U D IO TO VHF AMPLIFIER 2 .5 - a s APPLICATIONS. + Û 25 i.5 ~ a i5 HO +I tfc5 DC Current Gain Specified : —0.1~ —500mA

transistor marking MK

Abstract: YTS2222
Contextual Info: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ÌQ'msa • TOSHIBA TRANSISTOR 0017=^7 S « T 0 S 4 - YTS2907A SILICON PNP EPITAXIAL TYPE (PCT PROCESS) FOR HIGH SPEED SWITCHING USE Unit in mm +QS Z 5-Q 3 +<Ï2 S DC TO VHF AMPLIFIER APPLICATIONS AND

YTS2906

Abstract: YTS2222 YTS2221
Contextual Info: SILICON PNP EPITAXIAL TYPE YTS2907 Unit in mm FOR GENERAL PURPOSE USE + 0.5 MEDIUM SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATION FEATURES: • High DC Current Gain Specified : -0.1 ^-500mA • High Transition Frequency : fT=200KHz Min. @ Ic=-50mA

YTS2222

Contextual Info: TOSHIBA YTS2907 Transistor Unit in mm Silicon PNP Epitaxial Type For High-Speed Switching Use DC to VHF Amplifier Applications and Complementry Circuitry Features • High DC Current Gain Specified - 0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min.

YTS2222A

Contextual Info: TOSHIBA YTS2907A Transistor U n it in m m Silicon PNP Epitaxial Type +as Z 5 -a 3 For High-Speed Switching Use +<12 S .1.5-CU5 rtO d ö + I DC to VH F Amplifier Applications and Complementry Circuitry F e a tu re s • High DC Current Gain Specified a - -0.1 - -500mA

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

BC25SB

Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

YTS2222

Contextual Info: TOSHIBA YTS2222 Transistor Unit in mm Silicon NPN Epitaxial Type + Q5 as-a3 For General Purpose Use + Q25 <n Medium-Speed Switching and Audio to w o ö d + 1 VHF Frequency Application Features • D C Current Gain Specified €E- - 0.1 - 500mA • Low Collector-Emitter Saturation Voltage

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

Contextual Info: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60

TIPI27

Contextual Info: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0

YTS2222A

Contextual Info: TOSHIBA YTS2222A Transistor U n it in m m Silicon NPN Epitaxial Type For General Purpose Use Medium-Speed Switching and Audio to VHF Frequency Application Features • DC Current Gain Specified - 0.1 - 500mA • Low Coilector-Emitter Saturation Voltage - Vqe sat = 1 -60V (Max.) @ Iq = 500mA, lB = 50mA

YTS2222

Contextual Info: TOSHIBA TRANSISTOR YTS2222 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm +as Z S -Û 3 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION +Û2 3 ¿S-Q15. HO d <3 FEATURES: +i . DC Current Gain Specified : 0.1— 500mA

2N3904

Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
Contextual Info: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13

YTS2222A

Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Contextual Info: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE D • ^0=17250 O a i T ^ S 1 «TOSM TOSHIBA YTQ9QÍ17 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTSZ907 FOR HIGH-SPEED SWITCHING USE DC TO VHF AMPLIFIER APPLICATIONS AND