TA4100F Search Results

TA4100F

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

IC1530

Abstract: TA4100F
Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4100F SILICON MONOLITHIC O UHF VHF RF,MIX APPLICATION MAXIMUM RATING T . = 2 5°C SYMBOL UNIT CHARACTERISTICS RATING V C o l l e c t o r - B a s e V o l t a g e V C BO 1 0 V C o lle c to r -E m itte r Voltage V C E O

TA4100F

Abstract: toshiba Bipolar Linear Integrated Circuit Silicon
Contextual Info: TA4100F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4100F UHF VHF RF, MIX Application Features High fT. fT = 5 GHz Differential circuit is composed of 3 transistors. Pin Assignment (top view) Marking Weight: 0.013 g (typ.) 000707EBA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

MARKING BS

Abstract: C3j marking TIC 1.0M marking c3j TA4100F
Contextual Info: TO SHIBA TA4100F Bipolar Linear Integrated Circuit Unit in mm UHF VHF RF, Mix Application u - a î Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC ♦ 0.2 1.5 - 0.1 SYM BOL RATING UNIT C ollector-Base Voltage ^CBO 10 V C ollector-E m itter Voltage VcEO

TA4100F

Contextual Info: TA4100F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4100F UHF VHF RF, MIX Application Features l High fT. fT = 5 GHz l Differential circuit is composed of 3 transistors. Pin Assignment (top view) Marking Weight: 0.013 g (typ.) 000707EBA1

TA4100F

Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 4 1 Q0 F UHF VHF RF, M IX APPLICATION FEATURES • High • Differential Circuit is Composed of 3 Transistors. fj. fy = 5GHz S S O P 6 - P - 0 .9 5 PIN ASSIGNMENT (TOP VIEW)

TA4100F

Abstract: ta4100
Contextual Info: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

LF33

Abstract: BIPOLAR M 846 of LF33 TA4100F
Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA41OOF UHF VHF RFf M IX APPLICATION FEATURES • High f j . f-j- = 5GHz • D ifferential Circuit is Composed of 3 Transistors. SSOP6-P (SM6) W e ig h t : 0.013g (Typ.) PIN A SSIG N M E N T (TOP V IE W )

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13

SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Contextual Info: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Contextual Info: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz