1SV237 Search Results

Contextual Info: TOSHIBA 1SV237 Diode Unit in mm Silicon Epitaxial Pin Type VHF - UHF Band RF Attenuator Applications Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC R e verse V o lta g e F o rw a rd C u rre n t J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re R a ng e

1SV237

Contextual Info: 1SV237 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV237 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C

1SV237

Contextual Info: TOSHIBA_ 1SV237 1 SV2 3 7 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Weight : 0.013g ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Total Capacitance Series Resistance

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13

1SV237

Contextual Info: 1SV237 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 3 7 Unit in mm VH F-U HF BAND RF ATTENUATOR APPLICATIONS. + 0.2 2 . 9 - 0.3 -H MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range

SV237

Contextual Info: 1SV237 TO SHIBA 1 SV2 3 7 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Weight : 0.013g ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Total Capacitance Series Resistance SYMBOL VR ÏR Vf Ct rs TEST CONDITION

1SV237

Contextual Info: 1SV237 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV237 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125

1SV237

Contextual Info: 1SV237 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV237 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C

Contextual Info: 1SV237 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 37 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.9 + 0.2 — 0.3 e i IVI A A I IVI U IVI K A I IIM üb U a = SYMBOL CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range

Contextual Info: SILICON EPITAXIAL PIN TYPE DIODE 1SV237 W eight : 0.013g ELECTRICAL CHARACTERISTICS Ta = 25°C C t rs > - -y VR IR VF TEST CONDITION II SYMBOL o CHARACTERISTIC Reverse Voltage Reverse C urrent Forward Voltage Total Capacitance Series Resistance V r = 50V

1SV237

Contextual Info: 1SV237 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV237 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg −55~125

1SV237

Contextual Info: 1SV237 東芝ダイオード シリコンエピタキシャルPIN形 1SV237 ○ VHF･UHF バンド減衰器AGC 用 単位: mm • 外形が小さい。 : SC-61 • 低容量 : CT = 0.25 pF 標準 • 直列抵抗が小さい。 : rs = 4 Ω (標準)

marking N

Abstract: 35 marking
Contextual Info: 1SV237 SILICON EPITAXIAL PIN TYPE VHF-UHF BAND RF ATTENUATOR APPLICATIONS. ELECTRICAL CHARACTERISTICS Ta=25°C CHARACTERISTIC SYNBOL TEST CONDITION MIN. TYP. - MAX. UNIT V vr lR=10fjA 50 Reverse Current IR V r =50V - Forward Voltage VF Ip=50nA - 0.95 Total Capacitance

Contextual Info: 1SV237 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV237 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125

Contextual Info: 1SV237 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 3 7 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. + 0.2 9.9 — 0.3 -H MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

ISV80

Abstract: 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34 1SV35
Contextual Info: 176 - - fe * m Vr r m £ V 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 ÄS ÄS ÄS 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 am um BM 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1S V 121 1S V 122 1SV128 1SV156 1 S V 157 1 SV 172 1 S V 178

1SV80

Abstract: 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34 1SV35
Contextual Info: 1 76 - - * m Vrrm V £ 1S 218 6 I S S I 55 1SS238 1SS241 1S S364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233

1SV196

Abstract: 1SV237 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34
Contextual Info: 176 - - * m Vrrm V £ 1S 218 6 I S S I 55 1SS238 1SS241 1S S364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233

1SV196

Abstract: 1sv128 1SV156 ISV80 MA555 1S2186 1SS238 1SS241 1SS364 1SV26
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

KTC2712

Abstract: 2SK1001 jfet cascade trimer VU METER 32 led 1SV237 3SK195 KIA2082F KIA2093F fet cross reference
Contextual Info: KEC KIA2082F SEMICONDUCTOR TECH N ICAL DATA KOREA ELECTRONICS CO.,LTD. BIPOLAR LINEAR INTEGRATED CIRCUIT ADVANCED RF PROCESSOR KIA2082F is an advanced RF processor for car tuners. An FM front end and AM tuner are internal parts are drastically reduced. Car tuners with both FM/AM require only the KIA2093F

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455