HVM187WK Search Results

HVM187WK

Contextual Info: HVM187WK Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0116-0600Z Previous: ADE-208-056E Rev.6.00 Oct.08.2003 Features • Low forward resistance. (rf = 5.5 Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

Contextual Info: HITACHI ADE-208-056E Z HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Preliminary Rev. 5 Jun. 1993 HITACHI Features Pin Arrangement • Low forward resistance, (rf =5.5Q max) • M PA K p ack ag e is su ita b le for high density

Hitachi DSA002712

Contextual Info: HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-056E Z Preliminary, Rev. 5 Jun. 1993 Features • Low forward resistance. (rf = 5.5Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA00774

Abstract: HVM187WK SC-59A
Contextual Info: ADE-208-056E Z HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Preliminary Rev. 5 Jun. 1993 Features Pin Arrangement • Low forward resistance. (rf =5.5Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

rf transistor mark code H1

Abstract: HVM187WK SC-59A DSA003636
Contextual Info: HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-056E Z Rev. 5 Jun. 1993 Features • Low forward resistance. (rf = 5.5Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

Contextual Info: HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator HITACHI ADE-208-056E Z Preliminary, Rev. 5 Jun. 1993 Features • Low forward resistance. (rf = 5.5i2max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA002789

Contextual Info: HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-056E Z Rev. 5 Features • Low forward resistance. (r f = 5.5Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

HVM187WK

Abstract: SC-59A
Contextual Info: HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-056E Z Rev. 5 Jun. 1993 Features • Low forward resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

Contextual Info: HVM187WK-Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Features Pm Arrangement • Low forward resistance, rf =5.5i2 max • MPAK package is suitable for high density surface mounting and high speed assembly. Ä

Contextual Info: HVM187WK Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0116-0600Z Previous: ADE-208-056E Rev.6.00 Oct.08.2003 Features • Low forward resistance. (rf = 5.5 Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

HVM187WK

Abstract: SC-59A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

1SV80

Abstract: 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34 1SV35
Contextual Info: 1 76 - - * m Vrrm V £ 1S 218 6 I S S I 55 1SS238 1SS241 1S S364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233

1SV196

Abstract: 1sv128 1SV156 ISV80 MA555 1S2186 1SS238 1SS241 1SS364 1SV26
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR

1SV196

Abstract: 1SV80 1SV178 1SV156 1SV34 1SV28 1sv128 ISV80 1S2186 1SS238
Contextual Info: - 1 76 - fe * m Vr r m £ 1SV26 1SV 2 7 1SV28 1SV34 1SV35 1SV36 1SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1 S V 121 1 S V 122 1SV128 1SV156 1 S V 157 1 S V 172 1 S V 178 1SV187 Ä S Ä S Ä S ä B M B l B Q B Q B M b q B l b q

1sv196

Abstract: 1SV80 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

DIODE marking Sl

Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
Contextual Info: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7

HSK277

Contextual Info: INDEX .83 .217 .221 .85 .87 .89 .91 .93 . 95 .97 .99 .457 .227 .229 .231 .233 .459 . 101 . 103 . 105 .235 .237 .239 .241 . 107 . 109 .461 .243 .481 . 283 .285 .287 .290 .293 . 296 .298 . 300 . 303 . 305 .307 .309 .311 .313 . 315

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing