JDV2S Search Results

Contextual Info: JDV2S36E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S36E TCXO/VCO Unit: mm • High capacitance ratio: C1V / C6V = 7.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics

JDV2S05S

Contextual Info: 20010205 JDV2S05S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4 V

JDV2S13S

Contextual Info: 20010205 JDV2S13S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V

JDV2S40FS

Abstract: C10V
Contextual Info: JDV2S40FS TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S40FS VCO for UHF Band Radio Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 15 V Junction temperature Tj 150 °C Tstg −55 to 150

JDV2S38SC

Contextual Info: JDV2S38SC TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S38SC VCO for UHF Band Radio Low Series Resistance : rs = 0.48 Ω typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products

JDV2S05E

Contextual Info: 20010126 JDV2S05E SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4 V

Contextual Info: 20010205 JDV2S03S SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 1V ～ 4V Ta = 27℃

JDV2S36E

Contextual Info: JDV2S36E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S36E TCXO/VCO Unit: mm • High capacitance ratio: C1V / C6V = 7.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics

marking FB

Abstract: JDV2S02E
Contextual Info: JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

JDV2S05E

Contextual Info: JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 1.9 typ. • Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

JDV2S09S

Contextual Info: JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S09S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.1 typ. • Low series resistance: rs = 0.33 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S02S

Contextual Info: JDV2S02S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02S VCO for UHF band Unit in mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S17S

Contextual Info: JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio • Unit: mm High Capacitance Ratio : C1V/C4V = 2.1 typ. • Low Series Resistance : rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S06S

Contextual Info: JDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.27 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

JDV2S14E

Contextual Info: JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S14E Useful for VCO/TCXO • Small Package • High Capacitance Ratio : C1V/C2.5V = 2.15 typ. • Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

JDV2S31SC

Contextual Info: JDV2S31SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S31SC VCO for UHF Band Radio Low series resistance : rs = 0.23 Ω typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. Lead (Pb)-free. 0.62±0.03

JDV2S01FS

Contextual Info: JDV2S01FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01FS VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.5 Ω (typ.) • This device is suitable for use in a small-size tuner. 0.6±0.05

JDV2S19S

Contextual Info: JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 1.8 typ. • Low series resistance: rs = 0.35 Ω (typ.) • This device is suitable for use in a small-size tuner. Absolute Maximum Ratings (Ta = 25°C)

C25V

Abstract: JDV2S71E
Contextual Info: JDV2S71E 東芝ダイオード シリコンエピタキシャルプレーナ形 JDV2S71E ○ UHF SHF 電子同調用 単位: mm • 容量変化比が大きい。 : C1V/C25V = 11.5 標準 • 直列抵抗が小さい。 • C-V カーブの直線性が良くトラッキングエラーが少ない。

Contextual Info: JDV2S06S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S06S VCO for UHF Band Radio • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.27 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C)

Contextual Info: JDV2S28SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S28SC VCO for UHF Band Radio Unit: mm High Capacitance Ratio : C1V/C3V = 2.17 typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. • Lead (Pb)-free.

JDV2S16FS

Contextual Info: JDV2S16FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S16FS VCO for the UHF band Unit: mm • High capacitance ratio: C1V/C4V = 2.0 typ. • Low series resistance: rs = 0.55 Ω (typ.) • This device is suitable for use in a small-size tuner. 0.6±0.05

JDV2S10FS

Contextual Info: JDV2S10FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10FS VCO for the UHF band Unit: mm This device is suitable for use in a small-size tuner. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 10 V Junction temperature

JDV2S25FS

Contextual Info: JDV2S25FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S25FS VCO for UHF Band Radio Unit: mm High capacitance ratio: C1V/C4V = 2.9 typ. • Low series resistance: rs = 0.49 Ω (typ.) • This device is suitable for use in small tuners. 0.6±0.05 0.1