C10V Search Results
C10V Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CESDP0201UC10VB
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CREATEK Microelectronics | Ultra low capacitance ESD protection diode in 0201 package with 0.05 pF junction capacitance, 10 V rated voltage, and ±30 kV IEC61000-4-2 ESD protection for high frequency, low voltage signal lines. | Original |
C10V Price and Stock
Schneider Electric C10V4TM050Power breaker; Inom: 50A; IP40; -25÷70°C; Short circuit cap: 75kA |
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C10V4TM050 | 1 |
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Schneider Electric C10V3MA025Power breaker; Inom: 25A; IP40; -25÷70°C; Short circuit cap: 75kA |
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C10V3MA025 | 1 |
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Schneider Electric C10V3TM080Power breaker; Inom: 80A; IP40; -25÷70°C; Short circuit cap: 75kA |
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C10V3TM080 | 1 |
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Schneider Electric C10V3MA100Power breaker; Inom: 100A; IP40; -25÷70°C; Short circuit cap: 75kA |
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C10V3MA100 | 1 |
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Shindengen Electronic Manufacturing Co Ltd S60JC10V-5100Diode: Schottky rectifying; THT; 100V; 60A; TO247AD; Ufmax: 950mV |
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S60JC10V-5100 | 1 |
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C10V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: 1SV279 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C2V / C10V = 2.5 typ. • Low series resistance: rs = 0.2 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) |
Original |
1sv279 | |
C10V
Abstract: JDV2S41FS 1A15
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Original |
jdv2s41fsc2v/c10v470mhzc10v+1 | |
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Contextual Info: JDV2S41FS TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S41FS VCO for V/UHF Band Radio • Unit: mm Low series resistance: rs = 0.2 Ω typ. High capacitance ratio: C2V / C10V = 2.5 (typ.) Useful for small size tuner. 0.6±0.05 A 0.1 |
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jdv2s41fs | |
zener diode C5V
Abstract: Zener c9v 3.1v to 350v ZENER DIODE LTC6802-1 c5v zener diode zener c6v fet n-channel pin configuration ADC ic 0808 pin diagram ADC IC 0808 ic 0808 pin diagram
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ltc6802-112-bitltc6802-268021p+9 | |
ad1242Contextual Info: 1SV229 SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO Unit in m m . Ultra Low Series Resistance : rs= 0 .2n Typ. . Useful for Small Size Set MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Vr 15 V Junction Temperature Tj |
OCR Scan |
1sv229c2v/c10v70mi1zad1242 | |
AFC marking
Abstract: marking T4
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OCR Scan |
1sv216c2v/c10v470mhzafc marking+1 | |
JDV2S40FS
Abstract: C10V
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Original |
jdv2s40fsc10v | |
1SV279
Abstract: C10V
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Original |
1sv279c2v/c10vc10v | |
MV2112Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER MV2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2107 MV2108 MV2109 MV2110 MV2111 MV2112 MV2113 MV2114 MV2115 MV2201 MV2203 MV2205 MV2207 |
OCR Scan |
mv2101mv2115mv2201mv2215+6 | |
C10V
Abstract: SDV708D DIODE marking V8
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sdv708dod-323ksd-c031-000c2v/10v+3 | |
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Contextual Info: MMVL535T1 Advance Information Voltage Variable Capacitance Diode for UHF Band Radio http://onsemi.com This device is designed for UHF tuning and general frequency control and tuning. This device is supplied in the SOD−323 plastic surface mount package for high volume, pick and place assembly |
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mmvl535t1mmvl535t1/d | |
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Contextual Info: 1SV239 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 3 9 Unit in mm VCO FOR UHF RADIO Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set 0 ± 0 .0 5 1 0.15 + 0.2 0.9 - 0.1 0.06 10.15 +- 0.1 m i -T- MAXIMUM RATINGS (Ta = 25°C) |
OCR Scan |
1sv239 | |
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Contextual Info: TOSHIBA 1SV279 1 SV2 7 9 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR V /U H F BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2 V /C 10 V —2.5 TYP. • Low Series Resistance : rs = 0.20 (TYP.) • Useful for Small Size Tuner. |
OCR Scan |
1sv2790014g470mhz | |
LT6000
Abstract: LTC6802-2 LTC6802-1
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Original |
ltc6802-244-lead500kbpsltc6802-1+2 | |
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B0218
Abstract: Transistor B1214
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Original |
isl9421212-cellisl94212s254mm+4 | |
UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
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OCR Scan |
semi260ty510ty6004ty6008+14 | |
DIODE IR1J
Abstract: ir1j
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OCR Scan |
kdv153ot-23c2v/c10v470mhz+2 | |
C10V
Abstract: KDV239
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Original |
kdv239100mhzc10v | |
C10V
Abstract: KDV153 nc marking
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Original |
kdv153c2v/c10v470mhzc10v+1 | |
KDV212EContextual Info: SEMICONDUCTOR TECHNICAL DATA KDV212E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES Excellent C-V Characteristics, and Small Tracking Error. 1 A High Capacitance Ratio E C B CATHODE MARK Low Tuning Voltage 2 D MAXIMUM RATING Ta=25 |
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kdv212ec1v/c10v470mhz | |
KS88C8016
Abstract: TAD 7265 data
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OCR Scan |
ks88c801616-bit20-bit336-byte+2 | |
LTC6804IG-1Contextual Info: LTC6804-1/LTC6804-2 Multicell Battery Monitors Features Description Measures Up to 12 Battery Cells in Series n Stackable Architecture Supports 100s of Cells n Built-In isoSPI Interface: 1Mbps Isolated Serial Communications Uses a Single Twisted Pair, Up to 100 Meters |
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ltc6804-1/ltc6804-216-bitiso26262ltc6804+6 | |
motorola 039
Abstract: C10V MMVL229A
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mmvl229a/dmmvl229amotorola 039c10v | |
C10V
Abstract: KDV154
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Original |
kdv154c2v/20v470mhzc10v | |