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Renesas Electronics Corporation


Renesas Electronics Corporation RJP30E2DPP-M0#T2 Silicon N Channel IGBT High Speed Power Switching
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJP30E2DPP-M0#T2		18,811		41	1 - 10 - 100 $8.71 1000 $7.80 10000 $7.34	Buy Now
Rochester Electronics	RJP30E2DPP-M0#T2		18,811		1	1 - 10 - 100 $6.97 1000 $6.24 10000 $5.87	Buy Now
Renesas Electronics Corporation RJP30E2DPP-M0-T2 Insulated Gate Bipolar Transistor, 35A I(C), 360V V(BR)CES, N-Channel, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	RJP30E2DPP-M0-T2		1,187			1 - 10 - 100 - 1000 - 10000 -	Get Quote

RJP30E2DPP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
rjp30e2 Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200 Contextual Info: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	rjp30e2dpp-m0 o-220fl r07ds0347ej0200 prss0003af-a +5rjp30e2 rjp30e2dpp rjp30e r07ds0347ej rjp30	PDF
Contextual Info: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	rjp30e2dpp-m0 r07ds0347ej0200 o-220fl prss0003af-a	PDF
Contextual Info: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	rjp30e2dpp-m0 r07ds0347ej0200 o-220fl prss0003af-a	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	r07cs0003ej0100 rjp63k2 rjp63f3 rjp30e2 +7rjp30h2 rjj0319dsp rjp63f rjp30h3 rjj0319 bcr1am-12a equivalent rjj0606	PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	r07cs0003ej0200 rjj0319dsp bcr8pm equivalent rjp30h2 +7n0201 rjj0319 np109n055puj rjk5020 rjp30e2dpp np75n04yug lg washing machine circuit diagram	PDF