HVM132 Search Results

Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0£2max) • M PAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA00306

Abstract: HVM132 SC-59A 1r7e
Contextual Info: ADE-208-318 Z HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 0 Jan. 1995 Features Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

Contextual Info: HVM132-Silicon Epitaxial Planar PIN Diode for Antenna Switching Features Outline • Low capacitance. C=0.5pF max • Low forward resistance. (rp2.0i2 max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0i2max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: ADE-208-318 Z HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Rev. 0 Jan. 1995 Outline Features • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Q max) • M PA K p a ck a g e is su ita b le for h igh d en sity

HVM132WK

Abstract: SC-59A Hitachi DSA00304
Contextual Info: ADE-208-319B Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 2 Jan. 1996 Features Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

03p4

Abstract: Hitachi DSA001653
Contextual Info: HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-319B Z Rev. 2 Jan. 1996 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: H ITACHI ADE-208-319B Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features Rev. 2 Jan. 1996 Outline n3 Low capacitance.(C=0.5pF max) • Low forward resistance. (rp 2 .0 £ i max) • M P A K package is suitable fo r high density

Contextual Info: HVM132WK-Silicon Epitaxial Planar PIN Diode for Antenna Switching Features Outline • Low capacitance. C=0.5pF max • Low forward resistance. (rp=2.0Q max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: A D E - 2 0 8 - 3 1 9 Z HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Rev. 0 J a n . 1994 Features Outline n3 • Low capacitance. (C=0.5pF max) • Low forward resistance. (rp2.0Q max) • MPAK package is suitable for high density

Contextual Info: HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI ADE-208-318 Z Rev. 0 Jan. 1995 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0i2max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-318 Z Rev. 0 Jan. 1995 Features • Low capacitance.(C = 0.5pFmax) • Low forward resistance. (rf = 2.0Ωmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

qo-10

Contextual Info: HITACHI ADE-208-318 2 HVM132 Silicon Epitaxial Planar Pin Diode for Antenna Switching HITACHI Features Rev. 0 Jan. 1995 Outline • Low capacitance.(C=0.5pF max) • Low forward resistance. (rp2.0Q max) • MPAK package is suitable for high density surface mounting and high speed assembly.

diode 368b

Abstract: HUV131 HUV132 HVC376B 358B diode varicap 5.8 Ghz hvc365 cross HVC 3-12 varicap diode c05 10 48 diode
Contextual Info: Tune your Circuits Mobile Phone Applications Hitachi’s range of Varicap and PIN diodes addresses the needs of todays mobile phone development engineers. A small package, wide tuning range, low operating voltage and low noise have made these diodes one of

DIODE marking Sl

Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
Contextual Info: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7

HSK277

Contextual Info: INDEX .83 .217 .221 .85 .87 .89 .91 .93 . 95 .97 .99 .457 .227 .229 .231 .233 .459 . 101 . 103 . 105 .235 .237 .239 .241 . 107 . 109 .461 .243 .481 . 283 .285 .287 .290 .293 . 296 .298 . 300 . 303 . 305 .307 .309 .311 .313 . 315

Contextual Info: DIODE 7 -f • 7 K -7’ S PIN SERIES High frequency switching diodes ^ —K PIN diodes for antenna switching Characteristics Package Code URP Antenna switching UFP MPAK Vr Type No. V I Application ' 1 Ratings Pd (mW) c VF (V) If (p p ) max (mA) max HVU131

1SS106

Abstract: pin diode do35 HSM8 HSM126S DO-35 rectifier HVU12 lld zener HSK277 SMD DIODE 1N4148 PACKAGE hsu277
Contextual Info: Package Wise Guide Switching Diode Signal Processing Plastic SMD1 Application MPAK Highspeed switching HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C High voltage switching HSM83 Glass SMD2 Insertion Type URP DO-35 MHD LLD 1N4148 1 S 2 0 7 4 '1 1S2075 *1

MESFET Application

Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
Contextual Info: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:

hitachi mosfet power amplifier audio application

Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Contextual Info: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners

hvm15 varicap

Abstract: hvc321b varicap diode tv tuner LT 5246 HUV131 diode lt 316 varicap diode HITACHI tuner C25 diode CVR 275 20
Contextual Info: Tune your Circuits Tuner Applications Varicap Diode Samples in this Kit: • • • • • • HVU 202B HVC 202B HVU 300B HVC 300B HVU 306B HVC 306B • • • • • • HVU 363B HVC 363B HVU 12 HVC 316 HNC 317B HVM 15 Hitachi’s range of Varicap and PIN Diodes

1SS106

Abstract: 1SS119 1SS172 1SS108
Contextual Info: Type No. Page Package code Type No. P*9 Package ootte Type No. Page Package code 1S1146 6 DO-35 HRW0503A 1S2074® 6 DO-35 HRWO702A 1S2075® 6 DO-35 HRW0703A 7 MPAK HSU277 5 URP 1S2076 6 DO-35 HRW1002A 7 LDPAK © HVB14S 5 CM PAK 1S2076A 6 DO-35 HRW1002A ©

BAP63-01

Abstract: BAP64-03 bap50-05 1SV308 replacement BAP64 BAP64-06W Diode RN731V BAP50-04 HSMP-3893 BAP70-02 equivalent
Contextual Info: Philips Semiconductors PIN diodes designed for RF applications up to 3 GHz Philips Semiconductors’ PIN diodes are designed for RF applications up to 3 GHz. Supplied in highly compact packaging, they allow for significant board-size reduction and hence smaller, lighter mobile