BFR38 Search Results

BFR38

Abstract: uhf vhf amplifier pnp vhf transistor
Contextual Info: BFR38 SILICON PLANAR PNP LOW-NOISE U H F/V H F A M PLIFIER T he B F R 3 8 is a silico n p la n ar e p ita x ia l PNP tra n s is to r in Jedec T O -7 2 m etal case. It is intended fo r very lo w noise T V aerial a m p lifie rs and M A T V p re a m p lifie r a p p lica tio n s

BFR380F

Abstract: microstrip
Contextual Info: BFR380F High IIP3 CDMA 800 LNA A High Third-Order Input Intercept Point CDMA 800 Low Noise Amplifier Overview • Inductive emitter degeneration microstrip and low impedance paths to ground at base and collector were used to increase 3rd order intercept point.

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

TRANSISTOR MARKING NK

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

transistor 1107

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

C5 MARKING TRANSISTOR

Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)

Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

BFR380F

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 2 3 wide dynamic range application
Low voltage operation 1
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BFR380F
Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for wide dynamic range application 2 3 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR380F

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

DIN 6784 c1

Abstract: BCR108T BFR380T E6327 SC75
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

an22117

Abstract: tua9001 Diplexer Schematic DVB-T Schematic mipi PCB layout an22116 BFR380 VHF lna 30 to AN221 C104
Contextual Info: L o w C o s t D V B - T /H L N A u s i n g BFR380 L3 Portable TV Applications App lication No te AN221 Revision 1.0, 2010-06-21 RF and Protect i on Devi ces Edition 2010-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application • Low voltage operation 1 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

BFR380T

Abstract: GPS05996 TBD 135 Transistor
Contextual Info: BFR380T NPN Silicon RF Transistor 3 Target Data • • • • High Current Capability and Low Noise Figure for Wide Dynamic Range Applications Low Voltage Operation Ideal for Low Phase Noise Oscillators up to 4 GHz Low Noise Figure : 1.4dB at 2.0GHz 2 1

BFR380F

Contextual Info: BFR380F NPN Silicon RFTransistor Preliminary data
High current capability and low noise figure for wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 2 3 1
Low noise figure: 1.1dB at 1.8GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR193L3

Abstract: BFR380L3 marking FC
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application • Low voltage operation 1 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

marking FC

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR380F NPN Silicon RF Transistor Preliminary data • High current capability and low figure for 2 3 wide dynamic range application 1 • Low voltage operation • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz

Contextual Info: BFR380F NPN Silicon RF Transistor • High linearity low noise driver amplifier • Output compression point 19.5 dBm @ 1.8 GHz 2 3 1 • Ideal for oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz • Collector design supports 5V supply voltage

Contextual Info: BFS380L6 NPN Silicon RF Transistor* • High current capability and low figure for 4 3 5 wide dynamic range application 2 6 • Low voltage operation 1 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Built in 2 transistors TR1, TR2: die as BFR380L3