EHA07524 Search Results

BCR108T

Abstract: BFR181T SC75
Contextual Info: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

87757

Abstract: BFR181 BCW66
Contextual Info: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR34* transistor

Abstract: transistor k 4213 BFR340F C5 MARKING TRANSISTOR
Contextual Info: BFR340F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
Transistor frequency of 14 GHz
High insertion gain 2 3
Ideal for low current amplifiers and oscillators 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR949T

Abstract: SC75 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

1 R 4254

Abstract: BFR182 BCW66 infineon marking code L2
Contextual Info: BFR182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFR181T

Abstract: SC75
Contextual Info: BFR181T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

78145

Abstract: BFR92T SC75 BFT92T
Contextual Info: BFR92T NPN Silicon RF Transistor Preliminary data 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR182T

Abstract: SC75
Contextual Info: BFR182T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking

Contextual Info: BFR340F NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

Contextual Info: BFR182T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

E 94733

Abstract: BFT92T
Contextual Info: BFR92T NPN Silicon RF Transistor Preliminary data 3
For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA
Complementary type: BFT92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR193T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

bfr949

Abstract: BFR949F
Contextual Info: BFR949F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA 1 • fT = 9 GHz, F = 1 dB at 1 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

ua 722 fc

Abstract: BCR847BF MARKING rks BFR94
Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!

TRANSISTOR MARKING NK

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

transistor 1107

Contextual Info: BFR380T NPN Silicon RF Transistor 3 Preliminary data
High current capability and low figure for wide dynamic range application
Low voltage operation 2
Ideal for low phase noise oscillators up to 3.5 GHz 1
Low noise figure: 1.1 dB at 1.8 GHz VPS05996

BFR360T

Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

IC 7437

Abstract: BFR360F
Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

TRANSISTOR MARKING NK

Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!