SC79 Search Results

BA892-02V

Abstract: SC79
Contextual Info: BA892-02V Silicon Rf Switching Diode
For band switching in TV / VTR 2 tuners up to 2GHz
Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892-02V AA 1=C SC79 2=A Maximum Ratings Parameter Symbol

BAR67-02V

Abstract: SC79
Contextual Info: BAR67-02V Silicon PIN Diode
Low loss RF switch 2
RF attenuator
Low series capacitance and resistance 1 VES05991 Type Marking Pin Configuration Package BAR67-02V TT 1=C SC79 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 150 V Forward current

MA4ST300

Abstract: MA4ST320 MA4ST330 MA4ST340 MA4ST350 SC79
Contextual Info: MA4ST300 Series Low-Voltage / Wide Band Si Hyperabrupt Varactors Rev. V6 Features • Surface Mount Packages SC70 3LD, SC79, SOD-323 • High Capacitance Ratio at Low Voltages • High Q at Low Voltages • SPC Process for Superior C-V Repeatability • Available as Single and Common Cathode Pairs

Contextual Info: BAR67-02V Silicon PIN Diode
Low loss RF switch 2
RF attenuator
Low series capacitance and resistance 1 VES05991 Type Marking Pin Configuration Package BAR67-02V TT 1=C SC79 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 150 V Forward current

Contextual Info: BAS52. Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration

marking code INFINEON

Abstract: A2003 marking code of 0 to Z BB867-02V
Contextual Info: BB867. Silicon Tuning Diode
For SAT - Indor units
High capacitance ratio C1V /C25V typ.15.8
Low series inductance
Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration

Contextual Info: BAS52. Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration

10 SOT-23

Abstract: 236 SOD SOD523 to sc90 SC79
Contextual Info: Package Styles -01 CHIP ONLY -02 DO-7 GLASS AXIAL LEAD -06 SOD-323 PLASTIC SURFACE MOUNT -07 SOD523 SC79 SC90 PLASTIC SURFACE MOUNT -08 SOT-23 SINGLE CHIP PLASTIC SURFACE MOUNT -09 SOT-23 COMMON ANODE PLASTIC SURFACE MOUNT -10 SOT-23 COMMON CATHODE PLASTIC SURFACE MOUNT

Contextual Info: MA4ST300 Series Low-Voltage / Wide Band Si Hyperabrupt Varactors M/A-COM Products Rev. V5 Features • Surface Mount Packages SC70 3LD, SC79, SOD-323 • High Capacitance Ratio at Low Voltages • High Q at Low Voltages • SPC Process for Superior C-V Repeatability

Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns

BAR65-02V

Abstract: SC79
Contextual Info: BAR65-02V Silicon RF Switching Diode
Low loss, low capacitance PIN-diode 2
Band switch for TV-tuners
Series diode for mobile communication transmit-receiver switch 1 VES05991 Type Marking Pin Configuration Package BAR65-02V NN 1=C SC79 2=A Maximum Ratings

sc793

Abstract: SC7937 SC*37
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Single Supply 2.5 Gb/s Voltage Driver SC7937 Features • Rise Times Typically 100ps • Single Power Supply, 5 Volt or 5.2 Volts • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s

transistor p2w

Abstract: SC79
Contextual Info: 06037 Only One Name Means ProTek’Tion SC79 PACKAGE OUTLINE & DIMENSIONS SC79 PACKAGE PACKAGE OUTLINE C A B PACKAGE DIMENSIONS F INCHES MIN MAX MIN MAX A B C D E F 0.043 0.028 0.059 0.049 0.035 0.066 0.028 0.008 1.10 0.70 1.50 1.30 0.90 1.70 0.50 0.08

Contextual Info: BAS52. Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration

Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns

BAS16

Contextual Info: BAS16. Silicon Switching Diode
For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 1 Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 3 D 3 2 2 Type BAS16

Contextual Info: BAS52. Silicon Schottky Diode • Medium current rectifier Schottky diode • Low forward voltage at 200mA • High reverse voltage BAS52-02V 1 2 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration

diode marking gg 2a

Abstract: diode gg 2a BAR63-02V gg 2a SC79
Contextual Info: BAR63-02V Silicon PIN Diode
PIN diode for high speed switching 2 of RF signals
Low forward resistance, small inductance
Very low capacitance
For frequencies up to 3 GHz 1 VES05991 Type Marking Pin Configuration Package BAR63-02V GG 1=C SC79 2=A Maximum Ratings

Contextual Info: MA4ST300 Series Low-Voltage / Wide Band Si Hyperabrupt Varactors M/A-COM Products Rev. V5 Features • Surface Mount Packages SC70 3LD, SC79, SOD-323 • High Capacitance Ratio at Low Voltages • High Q at Low Voltages • SPC Process for Superior C-V Repeatability

LBAS516T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523 SC79 SMD plastic package. LBAS516T1G S-LBAS516T1G FEATURES • Ultra small plastic SMD package

BAS52-02V

Abstract: BAS52 SC79
Contextual Info: BAS52. Silicon Schottky Diode
Medium current rectifier Schottky diode
Low forward voltage at 200mA
High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration

BB867-02V

Abstract: BB867 SC79 marking 06
Contextual Info: BB867. Silicon Tuning Diode
For SAT - Indor units
High capacitance ratio C1V /C25V typ.15.8
Low series inductance
Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration

Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology,and encapsulated LBAS516T1G in the SOD523 SC79 SMD plastic package. 1 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns

INFINEON date code marking

Contextual Info: BB867. Silicon Tuning Diode • For SAT tuners • High capacitance ratio C1V/C25V typ.15.8 • Low series inductance • Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V  Type BB867-02V Package SC79 Configuration