BFR94 Search Results

Bfr94a

Abstract: BFT92 BFR90A BFR94
Contextual Info: BFR94A NPN 5 GHz wideband transistor Rev. 3 — 15 November 2010 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92 1.2 Features and benefits „ „ „ „ High power gain Low noise figure

BFR949T

Abstract: SC75 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR94

Abstract: NF751 BFR94A Ferroxcube cross reference
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR94A NPN 3.5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3.5 GHz wideband transistor DESCRIPTION BFR94A PINNING

BFR94

Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94
Contextual Info: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

BFR94

Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency

Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking

Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFR949T

Abstract: MA457 MARKING C6 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking

bfr949

Abstract: BFR949F
Contextual Info: BFR949F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA 1 • fT = 9 GHz, F = 1 dB at 1 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

ua 722 fc

Abstract: BCR847BF MARKING rks BFR94
Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFR94AW NPN 5 GHz wideband transistor Rev. 1 — 29 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR94AW uses the same crystal as the SOT23 version, BFR94A.

BFR94A

Contextual Info: tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope.

TRANSISTOR MARKING NK

Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

transistor SMD 12E

Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

BFR94

Contextual Info: BFR949L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor zs 35

Abstract: BFR949L3 transistor marking zs BFR94
Contextual Info: BFR949L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR94

Abstract: rf transistor bfr94 BFR-94
Contextual Info: BFR94 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI BFR94 is Designed for Class A, B and C Amplifier Applications in the 225 to 400 MHz Military Band. A 45° C E B E B FEATURES: • PG = 10 dB min. at 3 W/ 400 MHz • ηC = 50% min. at 3W/ 400 MHz

BFR94

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

4000 npn

Abstract: 122e
Contextual Info: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106

SMD 6PIN IC MARKING CODE

Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 BFR949L3 BFR94
Contextual Info: BFR949L3 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFR94AW

Abstract: BFR94A BFR94 sot23 transistor marking xg
Contextual Info: BFR94AW NPN 5 GHz wideband transistor Rev. 1 — 29 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR94AW uses the same crystal as the SOT23 version, BFR94A.

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross