BFR90 Search Results

s525

Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Contextual Info: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52

a 933 transistor

Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
Contextual Info: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •

Contextual Info: BFR90A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency

BFR90A

Contextual Info: BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case TO 50

BFR90 transistor

Abstract: BFR90 application "Small Signal Amplifiers" BFR90 s-tech BFR90 MOTOROLA BFR90D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Contextual Info: MOTOROLA Order this document by BFR90/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR90 Designed primarily for use in high–gain, low–noise, small–signal amplifiers. Also used in applications requiring fast switching times.

BFR90 application

Abstract: BFR90 transistor BFR90 BFR90 amplifier
Contextual Info: BFR90 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90 Marking: BFR90 Plastic case TO 50 1= Collector; 2= Emitter; 3= Base

BFR90

Abstract: BFR90 transistor transistor BFR90
Contextual Info: BFR90 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency

BFR90A

Contextual Info: BFR90A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency

Contextual Info: BFR90A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 B 1 C 3 2 E 2

Contextual Info: bbS3R31 DD3SE1S 166 M A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor X3A-BFR90A crystal N APER PHILIPS/DISCRETE bRE D — MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFR90A SOT37 , BFQ53 (TO-72) and BFR92A (SOT23). Crystals are supplied as whole

BFR90

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz

BFR90

Abstract: BFR90 application
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz

BFR90

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA

TO50 transistor

Abstract: BFR90A TO50 package
Contextual Info: Not for new design, this product will be obsoleted soon BFR90A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: Temic BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications R F-am plifier up to G H z range specially for w ide band antenna am plifier. Features • H igh pow er gain • L ow noise figure • High transition frequency BFR 90A M arking: BFR 90A

BFR90 transistor

Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Contextual Info: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50

BFR90A

Abstract: 662 k
Contextual Info: BFR90A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency

BFR90

Abstract: BFR90 transistor transistor BFR90 bfr90 philips BFQ51 UCD074 MEA44S UEA442
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS BFR90 INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers

BFR90

Contextual Info: BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz typ @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T

BFR90 transistor

Abstract: BFR90
Contextual Info: BFR90 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

ML 1557 b transistor

Abstract: lm 1766 ic LM 748
Contextual Info: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

BFR90A

Contextual Info: BFR90A Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency

BFR90

Abstract: 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz

crystal PHILIPS

Abstract: BFR90A BFQ53 BFR92A X3A-BFR90A
Contextual Info: Prod u ct specification P h ilip s S e m icon d u ctors NPN 5 GHz wideband transistor crystal X3A-BFR90A 711002b SbE D PHILIPS INTERNATIONAL DDMblOe feilT M P H I N M E C H A N IC A L DATA DESCRIPTION Crystal NPN crystal used in BFR 9 0A SOT37 , BFQ53 (TO-72)