MRF544 Search Results
MRF544 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| MRF544 |
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR | Original | 84.07KB | 4 | ||
| MRF544 |
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European Master Selection Guide 1986 | Scan | 29.51KB | 1 | ||
| MRF544 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 82.51KB | 1 |
MRF544 Price and Stock
Microchip Technology Inc MRF544RF TRANS NPN 70V 1.5GHZ TO-39 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MRF544 | Bulk | 1,000 |
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Buy Now | ||||||
MRF544 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 1 1 • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz |
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MRF544 234567897ABC 16D97B | |
MRF544Contextual Info: MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB typ @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min) |
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MRF544 To-39 25Vdc, MRF544 | |
MRF544
Abstract: IC 386
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MRF544 To-39 MSC1314 MRF544 IC 386 | |
MRF544Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz |
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MRF544 MRF544 | |
mrf544Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz |
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MRF544 To-39 MRF544 | |
bfr96 equivalent
Abstract: MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 MRF544 microsemi MRF237 5GHz PNP transistor
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MRF544 To-39 Emitter-BasF545 MRF544 MMBR5031LT1/2N5031 MRF581/MRF5812R1/BFR96 400mA 200mA 14dB/200MHz bfr96 equivalent MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 microsemi MRF237 5GHz PNP transistor | |
MRF951Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz |
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MRF951 MRF545 MRF544 MRF951 | |
BFR90Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA |
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BFR90 BRF90G BFR90 | |
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Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA |
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BFR96 BFR96G | |
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Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR91G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA |
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BFR91 BFR91G MRF607 2N6255 2N5179 | |
mrf555Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB |
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MRF553 BFR91 BFR90 MRF545 MRF544 MRF553 mrf555 | |
2N5109
Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor
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2N5109 To-39 Volta12, 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, 2N5109 transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor | |
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Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available |
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MRF5943, 300MHz BFR90 MRF545 MRF544 MRF5943 | |
RF 2N3866
Abstract: 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607
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2N3866 2N3866A To-39 28Vdc Volta15 RF 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607 | |
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mrf571
Abstract: 2N3866
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2N3866 2N3866A To-39 28Vdc MRF545 MRF544 mrf571 | |
MRF5943R1
Abstract: s-parameter 2N3866A
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MRF5943, 300MHz MRF5943R1 s-parameter 2N3866A | |
MRF559Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability |
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MRF559 MRF545 MRF544 MRF559 | |
BFR90Contextual Info: BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz typ @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T |
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BFR90 MRF545 MRF544 BFR90 | |
MRF559Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability |
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MRF559 MRF559 3-20-0erves | |
MRF5812Contextual Info: MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units |
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MRF5812, MRF545 MRF544 MRF5812 | |
2n5835
Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
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OCR Scan |
17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF965 low noise transistor cross motorola 2N3866 2n5160 | |
LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
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MRF581
Abstract: MRF581A 2N4427 MRF4427 MRF553 MRF555T vk200* FERROXCUBE bfy9 MSC1318
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MRF581/MRF581A MRF581 MRF581A MSC1318 MRF581 MRF581A 2N4427 MRF4427 MRF553 MRF555T vk200* FERROXCUBE bfy9 | |
MRF951
Abstract: 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
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MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 MSC1326 MRF951 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607 | |