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    MRF544 Search Results

    MRF544 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRF544
    Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF 84.07KB 4
    MRF544
    Motorola European Master Selection Guide 1986 Scan PDF 29.51KB 1
    MRF544
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 82.51KB 1
    SF Impression Pixel

    MRF544 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc MRF544

    RF TRANS NPN 70V 1.5GHZ TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF544 Bulk 1,000
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    • 1000 $5.41
    • 10000 $5.41
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    MRF544 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 1 1 • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz


    Original
    MRF544 234567897ABC 16D97B PDF

    MRF544

    Contextual Info: MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB typ @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)


    Original
    MRF544 To-39 25Vdc, MRF544 PDF

    MRF544

    Abstract: IC 386
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz


    Original
    MRF544 To-39 MSC1314 MRF544 IC 386 PDF

    MRF544

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz


    Original
    MRF544 MRF544 PDF

    mrf544

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz


    Original
    MRF544 To-39 MRF544 PDF

    bfr96 equivalent

    Abstract: MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 MRF544 microsemi MRF237 5GHz PNP transistor
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz


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    MRF544 To-39 Emitter-BasF545 MRF544 MMBR5031LT1/2N5031 MRF581/MRF5812R1/BFR96 400mA 200mA 14dB/200MHz bfr96 equivalent MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 microsemi MRF237 5GHz PNP transistor PDF

    MRF951

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz


    Original
    MRF951 MRF545 MRF544 MRF951 PDF

    BFR90

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA


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    BFR90 BRF90G BFR90 PDF

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA


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    BFR96 BFR96G PDF

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR91G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA


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    BFR91 BFR91G MRF607 2N6255 2N5179 PDF

    mrf555

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB


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    MRF553 BFR91 BFR90 MRF545 MRF544 MRF553 mrf555 PDF

    2N5109

    Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    2N5109 To-39 Volta12, 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, 2N5109 transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor PDF

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available


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    MRF5943, 300MHz BFR90 MRF545 MRF544 MRF5943 PDF

    RF 2N3866

    Abstract: 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607
    Contextual Info: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product


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    2N3866 2N3866A To-39 28Vdc Volta15 RF 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607 PDF

    mrf571

    Abstract: 2N3866
    Contextual Info: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product


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    2N3866 2N3866A To-39 28Vdc MRF545 MRF544 mrf571 PDF

    MRF5943R1

    Abstract: s-parameter 2N3866A
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available


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    MRF5943, 300MHz MRF5943R1 s-parameter 2N3866A PDF

    MRF559

    Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability


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    MRF559 MRF545 MRF544 MRF559 PDF

    BFR90

    Contextual Info: BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz typ @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T


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    BFR90 MRF545 MRF544 BFR90 PDF

    MRF559

    Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability


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    MRF559 MRF559 3-20-0erves PDF

    MRF5812

    Contextual Info: MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units


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    MRF5812, MRF545 MRF544 MRF5812 PDF

    2n5835

    Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan
    17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF965 low noise transistor cross motorola 2N3866 2n5160 PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    PDF

    MRF581

    Abstract: MRF581A 2N4427 MRF4427 MRF553 MRF555T vk200* FERROXCUBE bfy9 MSC1318
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz


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    MRF581/MRF581A MRF581 MRF581A MSC1318 MRF581 MRF581A 2N4427 MRF4427 MRF553 MRF555T vk200* FERROXCUBE bfy9 PDF

    MRF951

    Abstract: 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz


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    MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 MSC1326 MRF951 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607 PDF