MRF555 Search Results

MRF555 Datasheets (6)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRF555	Advanced Semiconductor	NPN SILICON RF TRANSISTOR	Original	PDF	64.9KB	3
MRF555	Microsemi	RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR	Original	PDF	169.25KB	5
MRF555	Motorola	RF LOW POWER TRANSISTOR NPN SILICON	Original	PDF	101.24KB	6
MRF555	Motorola	European Master Selection Guide 1986	Scan	PDF	111.46KB	1
MRF555	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	82.51KB	1
MRF555T	Microsemi	RF NPN Transistor	Original	PDF	169.26KB	5

MRF555 Price and Stock

Filter by Manufacturer

American Semiconductor, Inc


American Semiconductor, Inc MRF555 NPN silicon Rf power Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MRF555		22			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MRF555 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB	Original	mrf555 mrf545 mrf544 msc1316	PDF
MRF555 Abstract: J134 Contextual Info: MRF555 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range. DIM A B C D E F G H J K FEATURES: • 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 % Typ	Original	mrf555 j134	PDF
2N4427 Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF555 MRF5943C MRF607 Contextual Info: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	mrf555 mrf4427 2n4427 mrf553 +6mrf553t mrf607 2n6255 2n5179 2n5109 mrf5943c	PDF
M 2530 motorola Abstract: motorola M 2530 transistor rf m 2528 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF555 D e sig n e d p rim a rily fo r w id e b a n d larg e sig n a l p re d riv e r sta g e s in th e U H F fre q u e n c y range. • S p e cifie d @ 12.5 V, 4 7 0 M H z C h a ra c te ris tic s @ P0U = 1.5 W	OCR Scan	mrf555 m 2530 motorola motorola m 2530 transistor rf m 2528	PDF
Contextual Info: MOTOROLA Order this document by MRF555/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF555 Designed primarily for wideband large signal predriver stages in the UHF frequency range. • • Specified a 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W	OCR Scan	mrf555/d mrf555	PDF
mrf555 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon RF Low Pow er Transistor MRF555 Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB Typ	OCR Scan	mrf555	PDF
motorola AN938 Abstract: MRF555 AN938 motorola rf Power Transistor 15 w RF POWER TRANSISTOR NPN Contextual Info: MOTOROLA Order this document by MRF555/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF555 Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W	Original	mrf555/d mrf555 motorola an938 an938 +2motorola rf power transistor 15 w rf power transistor npn	PDF
Contextual Info: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	mrf555 mrf545 mrf544	PDF
Contextual Info: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	mrf555	PDF
2N4427 equivalent bfr91 Abstract: 13 6 npn 2N4427 equivalent transistor bfr96 transistor BFR91 2N5109 2N5179 BFR90 transistor BFR96 mrf5812 equivalent Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB	Original	mrf555 bfr90 mrf545 mrf544 +11msc1316 2n4427 equivalent bfr91 13 6 npn 2n4427 equivalent transistor bfr96 transistor bfr91 2n5109 2n5179 bfr90 transistor bfr96 mrf5812 equivalent	PDF
Contextual Info: tSetni-Conductoi tPiodueti, fine. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.S.A. MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W	Original	mrf555 15vdc	PDF
MRF581G Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581 Contextual Info: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA	Original	mrf581 mrf581g mrf581a mrf581ag +62n6255 2n5179 s-parameter 2n3866a 2n4427 mrf4427 mrf553	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	sg379/d 1n965brl zen15v 1n751as +151n967brl zen18v 1n751asrl 1n968brl zen20v mc68b21cp xcm916x1cth16 transistor marking code 12w sot-23 sg379 mc68b54p xc68hc805p18cdw mc68b50cp mc2830 ne555n chn ne555n	PDF
2N4427 Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427 Contextual Info: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39	Original	2n4427 to-39 mrf4427 1300 npn +7mrf553 mrf555 mrf559 mrf607 2n3866a 2n5179 2n6255	PDF

2n4427 MOTOROLA Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz	Original	2n4427 to-39 bfr91 bfr90 +12mrf545 mrf544 msc1301 2n4427 motorola motorola 2n4427 bfr90 amplifier 2n4427 equivalent bfr91 npn uhf transistor 2n5179 npn uhf transistor bfr96 low power transistor mrf581a mrf5943c motorola	PDF
MRF586 Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA	Original	mrf517 to-39 mrf571 bfr91 +12bfr90 mrf545 mrf544 mrf586 low cost bfr90 transistor 2n2857 uhf transistor common base amplifier 2n5179 bfr90 equivalent bfr91 transistor bfr96 rf power transistor npn mrf904	PDF
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	2n2876 2n3137 2n3375 2n3553 +162n3632 2n3733 2n3924 2n3926 2n3927 2n3948 mrf660 mrf485 ktc1969 mrf150mp mrf496 2sc2029b mrf648 mrf646 mrf429mp mrf648 data sheet	PDF
BFR91 transistor Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB	Original	mrf557 bfr90 mrf545 mrf544 +10bfr91 transistor 2n5109 bfr90 transistor bfr91 bfr96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent mrf586 transistor bfr96	PDF
Motorola transistors MRF648 Abstract: Motorola transistors MRF646 MRF648 MRF515 MRF646 MRF627 Transistor MRF630 2N5945 Motorola MRF644 MRF629 Contextual Info: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors H igher po w e r o u tp u t de vice s in this U H F po w e r tra n sisto r series fe a tu re in te rna lly in p u t-m a tch e d co n stru ctio n , are de sig ned	OCR Scan	mrf750 05a-0 mrf752 mrf754 +12mrf627 mrf559 mrf581 mrf515 motorola transistors mrf648 motorola transistors mrf646 mrf648 mrf646 transistor mrf630 2n5945 motorola mrf644 mrf629	PDF
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2n5109 to-39 mrf559 mrf4427 +102n4427 mrf553 mrf553t mrf607 rf npn power transistor 5 watt 2.4 ghz rf npn power transistor 1 watt 2.4 ghz rf npn power transistor 10 watt 2.4 ghz 2n5179 2n3866a 2n6255	PDF
MRF553G Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics	Original	mrf553 mrf553g 1n4148 diode 2n5179 +6mrf544 1n4148 2n4427 2n5109 2n6255 mrf4427	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	f2002 f2003 f2004 2sc3355 spice model +9transistor c2003 c319b mgf1412 rf transistor 10ghz mrf134 rf model .lib file 2sk571 mgf1402 mrf9331 pb_hp_at41411_19921101	PDF
s-parameter 2N4427 Abstract: S-parameter 2N5179 BFR91 Contextual Info: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units	Original	mrf5943 300mhz tempemrf545 mrf544 +3s-parameter 2n4427 s-parameter 2n5179 bfr91	PDF
BFR91 Abstract: 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz	Original	bfr91 vdc00 mrf571 bfr90 +11mrf545 mrf544 msc1308 2n4427 equivalent bfr91 2n4427 2n5179 2n6255 mrf4427 mrf553 mrf559 mrf607	PDF

MRF555 Search Results

MRF555 Datasheets (6)

MRF555 Price and Stock

American Semiconductor, Inc MRF555

MRF555 Datasheets Context Search

MRF555

2N4427

M 2530 motorola

mrf555

motorola AN938

2N4427 equivalent bfr91

MRF581G

MC68B21CP

2N4427

2n4427 MOTOROLA

MRF586

MRF660

BFR91 transistor

Motorola transistors MRF648

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

MRF553G

2SC3355 SPICE MODEL

s-parameter 2N4427

BFR91