MRF553T Search Results

MRF553T Datasheets (1)

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Microsemi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRF553T		Microsemi	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN 16V 500MA POWERMACRO	Original	PDF	148.78KB

MRF553T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF581G Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581 Contextual Info: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA	Original	mrf581 mrf581g mrf581a mrf581ag +62n6255 2n5179 s-parameter 2n3866a 2n4427 mrf4427 mrf553	PDF
2N4427 Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427 Contextual Info: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39	Original	2n4427 to-39 mrf4427 1300 npn +7mrf553 mrf555 mrf559 mrf607 2n3866a 2n5179 2n6255	PDF
2n4427 MOTOROLA Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz	Original	2n4427 to-39 bfr91 bfr90 +12mrf545 mrf544 msc1301 2n4427 motorola motorola 2n4427 bfr90 amplifier 2n4427 equivalent bfr91 npn uhf transistor 2n5179 npn uhf transistor bfr96 low power transistor mrf581a mrf5943c motorola	PDF
MRF586 Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA	Original	mrf517 to-39 mrf571 bfr91 +12bfr90 mrf545 mrf544 mrf586 low cost bfr90 transistor 2n2857 uhf transistor common base amplifier 2n5179 bfr90 equivalent bfr91 transistor bfr96 rf power transistor npn mrf904	PDF
BFR91 transistor Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB	Original	mrf557 bfr90 mrf545 mrf544 +10bfr91 transistor 2n5109 bfr90 transistor bfr91 bfr96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent mrf586 transistor bfr96	PDF
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2n5109 to-39 mrf559 mrf4427 +102n4427 mrf553 mrf553t mrf607 rf npn power transistor 5 watt 2.4 ghz rf npn power transistor 1 watt 2.4 ghz rf npn power transistor 10 watt 2.4 ghz 2n5179 2n3866a 2n6255	PDF
MRF553G Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics	Original	mrf553 mrf553g 1n4148 diode 2n5179 +6mrf544 1n4148 2n4427 2n5109 2n6255 mrf4427	PDF
s-parameter 2N4427 Abstract: S-parameter 2N5179 BFR91 Contextual Info: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units	Original	mrf5943 300mhz tempemrf545 mrf544 +3s-parameter 2n4427 s-parameter 2n5179 bfr91	PDF
BFR91 Abstract: 2N4427 equivalent bfr91 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz	Original	bfr91 vdc00 mrf571 bfr90 +11mrf545 mrf544 msc1308 2n4427 equivalent bfr91 2n4427 2n5179 2n6255 mrf4427 mrf553 mrf559 mrf607	PDF
MRF559 Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB	Original	mrf559 2n5109 2n4427 mrf4427 +7msc1317 mrf559 v 2n5179 2n6255 2n3866a mrf553 mrf607	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB	Original	mrf555 mrf545 mrf544 msc1316	PDF
MRF559 Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package	Original	mrf559 mrf559g	PDF
1N4148 Abstract: 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607 Contextual Info: MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	mrf553 mrf4427 2n4427 mrf553t +6mrf607 2n6255 2n5179 1n4148 2n5109 mrf5943c	PDF
MRF951 Abstract: 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607 Contextual Info: MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz • Low Noise Figure – 1.3dB @ 1GHz • Ftau - 8.0 GHz @ 6v, 30mA • Cost Effective Macro X Package	Original	mrf951 mrf4427 2n4427 mrf553 +6mrf553t mrf607 2n6255 2n5179 2n5109 mrf5943c	PDF

2N3866A Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427 Contextual Info: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product	Original	2n3866 2n3866a to-39 28vdc +9mrf555 2n4427 mrf4427 rf npn power transistor 1000 watt transistor 2n3866 for transistor bfr96 rf 2n3866 2n5179 2n6255	PDF
MRF557G Abstract: mrf557 2N5179 2N4427 2N5109 2N6255 MRF4427 MRF553 MRF607 mrf581a Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF557G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics	Original	mrf557 mrf557g 2n5179 2n4427 +62n5109 2n6255 mrf4427 mrf553 mrf607 mrf581a	PDF
transistor bfr96 Abstract: transistor BFR91 msc1302 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 2N5179 low cost BFR90 transistor RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR C 10-12 GHZ npn UHF transistor 2N5179 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA	Original	mrf517 to-39 mrf571 bfr91 +13bfr90 mrf545 mrf544 msc1302 transistor bfr96 transistor bfr91 2n2857 uhf transistor common base amplifier 2n4427 equivalent bfr91 2n5179 low cost bfr90 transistor rf power transistor npn vhf rf npn power transistor c 10-12 ghz npn uhf transistor 2n5179	PDF
s-parameter 2N4427 Abstract: S-parameter 2N5179 RF 2N3866 s-parameter 2N3866 s-parameter bfr91 s-parameter transistor 2N4427 2n3866 mrf559 v 2N4427 2N5179 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available	Original	mrf3866 bfr90 mrf545 mrf544 +13msc1312 mrf559 mrf904 s-parameter 2n4427 s-parameter 2n5179 rf 2n3866 s-parameter 2n3866 s-parameter bfr91 s-parameter transistor 2n4427 2n3866 mrf559 v 2n4427 2n5179	PDF
MRF5812 Abstract: mrf5812 equivalent S-parameter 2N5179 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5812, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA	Original	mrf5812 bfr91 bfr90 mrf545 +11mrf544 msc1319 mrf5812 equivalent s-parameter 2n5179 2n4427 2n5179 2n6255 mrf4427 mrf553 mrf559 mrf607	PDF
RF 2N3866 Abstract: Transistor 2N3866 2N3866A 2N3866 RF NPN POWER TRANSISTOR 1000 WATT npn UHF transistor 2N3866 equivalent UHF power TRANSISTOR PNP TO-39 2N4427 2N6255 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics	Original	2n3866 2n3866a to-39 28vdc +10msc1067 2n4427 mrf4427 rf 2n3866 transistor 2n3866 rf npn power transistor 1000 watt npn uhf transistor 2n3866 equivalent uhf power transistor pnp to-39 2n6255	PDF
2N5179 Abstract: MRF553 1N4148 2N4427 2N6255 MRF4427 MRF559 MRF607 MRF5943C 2n5179 chip Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB	Original	mrf553 mrf571 bfr91 bfr90 +12mrf545 mrf544 msc1316 2n5179 1n4148 2n4427 2n6255 mrf4427 mrf559 mrf607 mrf5943c 2n5179 chip	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ Contextual Info: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:	Original	2n5109 to-39 mrf545 mrf544 +3rf npn power transistor 1 watt 2.4 ghz rf npn power transistor 1000 watt transistor 12 ghz	PDF
2n2857 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB	Original	mrf553 2n2857	PDF
Contextual Info: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	mrf557 mrf545 mrf544	PDF

MRF553T Search Results

MRF553T Datasheets (1)

MRF553T Datasheets Context Search

MRF581G

2N4427

2n4427 MOTOROLA

MRF586

BFR91 transistor

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

MRF553G

s-parameter 2N4427

BFR91

MRF559

MRF559

1N4148

MRF951

2N3866A

MRF557G

transistor bfr96

s-parameter 2N4427

MRF5812

RF 2N3866

2N5179

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

2n2857