BFQ 540 application
Abstract: BFQ65 BFQ 540
Contextual Info: BFQ65 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence
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bfq65d-7402517-apr-96bfq 540 application+1bfq 540
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Contextual Info: bb53T31 GD3220b TAM Philips Semiconductors • AP y Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b=1E D MECHANICAL DATA NPN crystal used in BFQ65 SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole
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bb53t31gd3220bx3a-bfq65bfq65+3bfg67ot143bfq67
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4000 npn
Abstract: 122e
Contextual Info: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106
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bfq54tbfq63bfq65bfq66+8bfq67bfq67wbfq68bfq108bfq135bfq1364000 npn122e
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BFQ65
Abstract: BFQ67 X3A-BFQ65 BFG67
Contextual Info: P h ilip s Sem icon d u ctors Produ ct specification -T=3i-so NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL SbE D X3A-BFQ65 • 71106Sfc. QOHbCHb S'lb « P H I N M E C H A N IC A L DATA DESCRIPTION NPN crystal used in BFQ 65 SOT37 , BFG67 (SOT143)
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x3a-bfq6571106sbbfq65bfg67+3ot143bfq67urv-3-5-52/733
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philips 433-2
Abstract: BFQ65 b 647 transistor philips 433-2 npn npn 1349 0 227 100 203 433-2 npn EC 401 TRANSISTOR 702 TRANSISTOR npn philips 1965
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor PHILIPS international DESCRIPTION BFQ65 SbE ]> 7 1 1 0 0 2 b DOMSMôfl ISb • P H I N PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz
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bfq65philips 433-2b 647 transistorphilips 433-2 npn+6npn 13490 227 100 203433-2 npnec 401 transistor702 transistor npnphilips 1965
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Contextual Info: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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bfq6521-mar-97 |
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Transistor D 1881
Abstract: BFQ65 b 647 transistor philips 433-2 npn 1349 transistor 131-6 transistor 8505
Contextual Info: P h ilip s S em icon du ctors bbâB^ Bl QG31SRT bSQ W A P X Product sp ecification NPN 8 GHz wideband transistor BFQ65 LTE D N AUER PHILIPS/DISCRETE D ESCRIPTION PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz
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bbs3t31bfq65transistor d 1881b 647 transistor+4philips 433-2npn 1349transistor 131-6transistor 8505
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BFQ65
Abstract: BFQ 540 application LINEAR/525/OS/LM01A/MAR 527 transistor
Contextual Info: BFQ65 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence
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bfq65d-7402521-mar-97bfq 540 application+1linear/525/os/lm01a/mar 527 transistor
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BFQ65
Abstract: mar 739 LINEAR/525/OS/LM01A/MAR 527 transistor
Contextual Info: Temic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • • • High power gain
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bfq6521-mar-97mar 739linear/525/os/lm01a/mar 527 transistor |
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BFQ65
Contextual Info: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz
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BFQ65
Abstract: mar 806 transistor MAR 826 mar 739
Contextual Info: Tem ic BFQ65 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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bfq6521-mar-97mar 806transistor mar 826+1mar 739
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BFQ65
Abstract: BFG67 BFQ67 X3A-BFQ65 to4 TRANSISTOR
Contextual Info: ^ □53^31 0G32S0b TÔ4 Philips Semiconductors • APY Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b^E D MECHANICAL DATA NPN crystal used in BFQ65 (SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole
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0g32s0bx3a-bfq65bfq65bfg67+4ot143bfq67urv-3-5-52/733to4 transistor
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S852T
Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15
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bf961bf964sbf966sbf988+11bf994sbf995bf996sbf998s525ts888ts852tbf579t0-50bf96bfp183t
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s525
Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Contextual Info: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52
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fr91a
Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Contextual Info: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72
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bfg96bfp96bfp505bfp520+16bfp540bfq33cbfq63bfq65bfq66bfq161fr91aphilips bfqfq235at122 25 3fq262afr90a122ebfr134t122 25 10t122 25 72
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transistor bt 808
Abstract: transistor 1548 b
Contextual Info: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2
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00250bbbfq67transistor bt 808transistor 1548 b |
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417
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BAV90
Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17
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0d12deba243bc146/02bc849b/c+16bc338bc818ba314bas17bcf32/33bcx20bav90bd139 smdpmbt2369abf981bf966 smd2n2907 smdbf9802n4858 smdbfg65bc547 smd
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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SOT-173
Abstract: funkamateur SOT173 BFQ58 BFQ77 BFQ57 FUNKAMATEUR - Bauelementeinformation BFR94 bfr95 BFQ59
Contextual Info: FUNKAMATEUR - Bauelementeinformation Transistoren für die Hochfrequenztechnik Fortsetzung aus Heft 11/90 Typ Art An wen dung Plol tA .B G max [mW| max [V] max [V] m 60 180 20 15 2 125 250 20 15 2 >?• [•c] BFQ51 SPEp Vs, AZ BFQ51C SPEp Vs o o Ü C IO
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bfq51ot-37bfq51cot-173+15bfq52bfq53bf054ot-48/3bfr95bfr96sot-173funkamateursot173bfq58bfq77bfq57funkamateur - bauelementeinformationbfr94bfq59
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197xs310nw1p 59 transistorw1p 48 transistor+8transistor w1p 83icm ap 1703transistor smd marked rnwtransistor bd139 ph 71w1p 66 transistortransistor w1p 91pnp transistor smd ba rnw1p npn
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SOT-143 MARKING 550
Abstract: S852T S868 T0-50 TEMIC S868T BFP183T
Contextual Info: Temic Semiconductors TOSO 4 Marking T050 (3) Part Number SOT23 Ibias(niA) Vd(V) SOT143 Gp(dB) (50 Q) BiPMICs (Bipolar Monolithic Integrated Circuit) S858TA1 S858TA3 S868T S860T S872T Marking Part Number 858 TA3 868 860 * VcEO V 30 30 45 3 85 5 3.6 5 1.8
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ot143s858ta1s858ta3s868t+11s860ts872tbfp67bfp92abfp93asot-143 marking 550s852ts868t0-50temic s868tbfp183t
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