BF998 Search Results
BF998 Datasheets (80)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BF998 | Infineon Technologies | Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; | Original | 90.38KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Infineon Technologies | Silicon N-Channel MOSFET Tetrode | Original | 91.97KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Infineon Technologies | Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, gain controlled input stages up to 1GHz. | Original | 76.58KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF 998 | Infineon Technologies | TRANS MOSFET N-CH 12V 0.03A 4SOT-143 | Original | 130.9KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | NXP Semiconductors | BF998 - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS | Original | 121.33KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Philips Semiconductors | Silicon N-Channel MOSFET Tetrode | Original | 77.78KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Philips Semiconductors | Silicon N-Channel Dual Gate MOS-FET | Original | 223.08KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Siemens | Cross Reference Guide 1998 | Original | 27.35KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Siemens | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) | Original | 184.19KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Vishay Telefunken | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode | Original | 158.64KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Vishay Telefunken | TRANS MOSFET N-CH 12V 0.03A 4SOT-143 | Original | 223.35KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 83.98KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 101.25KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 105.31KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 30.6KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Philips Semiconductors | Silicon n-channel dual gate MOS-FET | Scan | 220.51KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998 | Philips Semiconductors | Silicon N-Channel Dual Gate MOS-FET | Scan | 290.75KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998,215 | NXP Semiconductors | BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal | Original | 121.33KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF998,215 | NXP Semiconductors | Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd | Original | 77.79KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF998 Price and Stock
Infineon Technologies AG BF998Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998 | 6,000 |
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BF998 | 2,386 |
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BF998 | 490 |
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BF998 | 6,666 |
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TELEFUNKEN Semiconductors BF998A(MO)GS08 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998A(MO)GS08 | 3,000 |
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Get Quote | |||||||
Siemens BF998E-6327Trans RF MOSFET N-CH 12V 0.03A 4-Pin SOT-143 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998E-6327 | 2,274 |
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BF998E-6327 | 2,350 |
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tfk BF998RWBGS08Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998RWBGS08 | 2,875 |
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Get Quote | |||||||
tfk BF998RAWPower Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF998RAW | 2,070 |
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BF998 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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S852T
Abstract: BF579 T0-50 BF964S BF96 BFP183T
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bf961bf964sbf966sbf988+11 | |
bf998rb
Abstract: BF998 BF998R BF998RAW BF998RW application BF998
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bf998/bf998r/bf998rwbf998rbf998bf998rw+5 | |
BF998 depletion
Abstract: BF988 bf988 sot 143 BF998
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bf998/bf998rbf998rbf998d-74025+4 | |
application BF998
Abstract: BF998R 800MHz BF998
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bf998/bf998r/bf998rwbf998bf998rbf998rw+4 | |
BF998RAW-GS08Contextual Info: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure |
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bf998/bf998r/bf998rw2002/95/ec2002/96/ecot143+5 | |
BF998R 800MHz
Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
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bf998/bf998r/bf998rwbf998bf998rbf998rw+7 | |
BF998Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes |
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bf998/bf998r/bf998rwbf998bf998r23-jun-99+1 | |
BF998 vishay
Abstract: application BF998 12864
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bf998bf998rbf998rwot-143+5 | |
BF998B-GS08
Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
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bf998bf998rbf998rw2002/95/ec+12 | |
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Contextual Info: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
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bf998q62702-f1586ot-343fl235bg5 | |
MAM184
Abstract: MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking
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ot143bf998mam184mosfet tetrode+3 | |
BB405
Abstract: BF998WR 4814 mosfet dual-gate MGC480
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bf998wrsca55117067/00/02/pp12bb405+3 | |
TRANSISTOR mosfet BF998
Abstract: BF998 SIEMENS BF998 marking code
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bf998q62702-f1586ot-343transistor mosfet bf998+2 | |
G2S 076 AAContextual Info: Tem ic BF998RW S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • • • |
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bf998rwbl998rw07-nov-97g2s 076 aa | |
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bf998
Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
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bf998ot143bf998rot143r+5 | |
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Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance |
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bf998bf998rbf998rwot-143+2 | |
BF998R
Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
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bf998bf998rmam039r77/02/pp15+4 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance |
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bf998wrr77/02/pp13 | |
BF 998
Abstract: BF998 BF998R 4551
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bf998/bf998rbf998bf998rd-74025+3 | |
BF998RW
Abstract: BF998 BF998R BF998RAW application BF998
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bf998/bf998r/bf998rwbf998rbf998bf998rwmprove+5 | |
BF998
Abstract: MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814
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bf998bf998rmam039mga002+7 | |
bf998
Abstract: bf998 mosfet tetrode application note VPS05178
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bf998vps05178ot143eht07305+3 | |
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Contextual Info: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. |
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bf998wrot343r | |
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Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! |
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bf998ot143bf998rot143r | |