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    BF998 Search Results

    BF998 Datasheets (80)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BF998
    Infineon Technologies Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; Original PDF 90.38KB 9
    BF998
    Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF 91.97KB 6
    BF998
    Infineon Technologies Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, gain controlled input stages up to 1GHz. Original PDF 76.58KB 7
    BF 998
    Infineon Technologies TRANS MOSFET N-CH 12V 0.03A 4SOT-143 Original PDF 130.9KB 7
    BF998
    NXP Semiconductors BF998 - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS Original PDF 121.33KB 15
    BF998
    Philips Semiconductors Silicon N-Channel MOSFET Tetrode Original PDF 77.78KB 12
    BF998
    Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Original PDF 223.08KB 9
    BF998
    Siemens Cross Reference Guide 1998 Original PDF 27.35KB 7
    BF998
    Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF 465.63KB 37
    BF998
    Siemens Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Original PDF 184.19KB 8
    BF998
    Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF 158.64KB 9
    BF998
    Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143 Original PDF 223.35KB 8
    BF998
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.98KB 1
    BF998
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 101.25KB 1
    BF998
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 105.31KB 1
    BF998
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 30.6KB 1
    BF998
    Philips Semiconductors Silicon n-channel dual gate MOS-FET Scan PDF 220.51KB 9
    BF998
    Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Scan PDF 290.75KB 10
    BF998,215
    NXP Semiconductors BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal Original PDF 121.33KB 15
    BF998,215
    NXP Semiconductors Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF 77.79KB 12
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    BF998 Price and Stock

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    Infineon Technologies AG BF998

    Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BF998 6,000
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    Ameya Holding Limited BF998 2,386
    • 1 -
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    Component Electronics, Inc BF998 490
    • 1 $0.38
    • 10 $0.38
    • 100 $0.29
    • 1000 $0.25
    • 10000 $0.25
    Buy Now
    Win Source Electronics BF998 6,666
    • 1 $72.37
    • 10 $56.34
    • 100 $56.34
    • 1000 $56.34
    • 10000 $56.34
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BF998A(MO)GS08 3,000
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    Siemens BF998E-6327

    Trans RF MOSFET N-CH 12V 0.03A 4-Pin SOT-143 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BF998E-6327 2,274
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    Chip 1 Exchange BF998E-6327 2,350
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    tfk BF998RWBGS08

    Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BF998RWBGS08 2,875
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    tfk BF998RAW

    Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BF998RAW 2,070
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    BF998 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


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    bf961bf964sbf966sbf988+11bf994sbf995bf996sbf998s525ts888ts852tbf579t0-50bf96bfp183t PDF

    bf998rb

    Abstract: BF998 BF998R BF998RAW BF998RW application BF998
    Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original
    bf998/bf998r/bf998rwbf998rbf998bf998rw+5d-7402523-jun-99bf998rbbf998rawapplication bf998 PDF

    BF998 depletion

    Abstract: BF988 bf988 sot 143 BF998
    Contextual Info: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features


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    bf998/bf998rbf998rbf998d-74025+420-jan-99bf998 depletionbf988bf988 sot 143 PDF

    application BF998

    Abstract: BF998R 800MHz BF998
    Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original
    bf998/bf998r/bf998rwbf998bf998rbf998rw+4d-7402523-jun-99application bf998bf998r 800mhz PDF

    BF998RAW-GS08

    Contextual Info: Not for new design, this product will be obsoleted soon BF998/BF998R/BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure


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    bf998/bf998r/bf998rw2002/95/ec2002/96/ecot143+5ot143rot343rbf99818-jul-08bf998raw-gs08 PDF

    BF998R 800MHz

    Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
    Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original
    bf998/bf998r/bf998rwbf998bf998rbf998rw+7d-7402523-jun-99bf998r 800mhzbf998 vishaybf998rawbf998 depletionapplication bf998 PDF

    BF998

    Contextual Info: BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features • Integrated gate protection diodes


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    bf998/bf998r/bf998rwbf998bf998r23-jun-99+1bf998rw PDF

    BF998 vishay

    Abstract: application BF998 12864
    Contextual Info: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance


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    bf998bf998rbf998rwot-143+5ot-143rot-343rbf998 vishayapplication bf99812864 PDF

    BF998B-GS08

    Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
    Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance


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    bf998bf998rbf998rw2002/95/ec+122002/96/ecot-143ot-143rot-343rbf998b-gs08national semiconductor marking code sot-143sot143 code marking msbf998abf998a-gs08bf998 vishayapplication bf998bf998raw-gs08 PDF

    Contextual Info: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    bf998q62702-f1586ot-343fl235bg5 PDF

    MAM184

    Abstract: MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking
    Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF998 FEATURES APPLICATIONS • Short channel transistor with high ratio I YfSl / Cis • VHF and UHF applications such as television tuners with 12 V supply voltage and professional


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    ot143bf998mam184mosfet tetrode+3mosfet vhf power amplifiertetrode transistormop top marking PDF

    BB405

    Abstract: BF998WR 4814 mosfet dual-gate MGC480
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR


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    bf998wrsca55117067/00/02/pp12bb405+34814 mosfetdual-gatemgc480 PDF

    TRANSISTOR mosfet BF998

    Abstract: BF998 SIEMENS BF998 marking code
    Contextual Info: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Shorl-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    bf998q62702-f1586ot-343transistor mosfet bf998+2bf998 siemensbf998 marking code PDF

    G2S 076 AA

    Contextual Info: Tem ic BF998RW S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features • • • • •


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    bf998rwbl998rw07-nov-97g2s 076 aa PDF

    bf998

    Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
    Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


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    bf998ot143bf998rot143r+5bf998wot343feb-13-2004bf998 mosfet tetrode application notetransistor mosfet bf998 PDF

    Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance


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    bf998bf998rbf998rwot-143+2ot-143rot-343r PDF

    BF998R

    Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer


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    bf998bf998rmam039r77/02/pp15+4mga002mge802application bf998dual-gate PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance


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    bf998wrr77/02/pp13 PDF

    BF 998

    Abstract: BF998 BF998R 4551
    Contextual Info: BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range D High gain D Available with reverse pin configuration BF 998 R


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    bf998/bf998rbf998bf998rd-74025+307-mar-97bf 9984551 PDF

    BF998RW

    Abstract: BF998 BF998R BF998RAW application BF998
    Contextual Info: BF998/BF998R/BF998RW Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages in UHF tuners. Features D D D D D Low input capacitance


    Original
    bf998/bf998r/bf998rwbf998rbf998bf998rwmprove+5d-7402523-jun-99bf998rwbf998rawapplication bf998 PDF

    BF998

    Abstract: MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


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    bf998bf998rmam039mga002+7mge802bf998 depletiondual-gatebf-998mge812bb405mge814 PDF

    bf998

    Abstract: bf998 mosfet tetrode application note VPS05178
    Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    bf998vps05178ot143eht07305+3eht07306aug-10-2001bf998 mosfet tetrode application note PDF

    Contextual Info: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.


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    bf998wrot343r PDF

    Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


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    bf998ot143bf998rot143r PDF