VPS05178 Search Results

mmic-amplifier

Abstract: VPS05178 337 BGA
Contextual Info: BGA 312 Silicon Bipolar MMIC-Amplifier 3
Cascadable 50 -gain block
11 dB typical gain at 1.0 GHz 4
9 dBm typical P -1dB at 1.0 GHz
3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312

SOT143 DUAL DIODE

Abstract: S11 SCHOTTKY diode BAT15-099 VPS05178
Contextual Info: BAT15-099 Silicon Dual Schottky Diode
DBS mixer applications up to 12 GHz 3
Low noise figure
Low barrier type 4 2 1 4 VPS05178 1 3 2 EHA07011 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099 S5s Pin Configuration

VPS05178

Abstract: Q62702-F1487 marking code g1s
Contextual Info: BF 1012 Silicon N-Channel MOSFET Tetrode 3 • For low noise, high gain controlled input stages up to 1GHz 4 • Operating voltage 12V • Integrated stabilized bias network 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-G0043

Abstract: VPS05178
Contextual Info: BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 16 dB typical gain at 1.0 GHz 4 • 12 dBm typical P-1dB at 1.0 GHz • 3 dB-bandwidth: DC to 1.2 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND

marking 93A

Abstract: TRANSISTOR BI 187
Contextual Info: BFP 93A NPN Silicon RF Transistor 3
For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A

transistor marking 47s

Abstract: VPS05178 BAS40-07 A1 SOT143
Contextual Info: BAS40-07 Silicon Schottky Diode 3
General-purpose diode for high-speed switching
Circuit protection 4
Voltage clamping
High-level detecting and mixing 2 1 VPS05178 BAS40-07 4 1 3 2 EHA07008 Type Marking BAS40-07 47s Pin Configuration 1=C1 2=C2 3=A2

A1 SOT143

Abstract: VPS05178 BAW101 EHA07008
Contextual Info: BAW101 Silicon Switching Diode Array 3
Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

MMIC SOT 89 marking CODE

Abstract: Q62702-G0042 VPS05178 BMS 13-58 Type 1
Contextual Info: BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data 3 • Cascadable 50 Ω-gain block • 11 dB typical gain at 1.0 GHz 4 • 9 dBm typical P -1dB at 1.0 GHz • 3 dB-bandwidth: DC to 2.0 GHz 2 1 RF OUT/Bias 1 RF IN VPS05178 3 Circuit Diagram 2, 4 GND

a3 sot143

Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Contextual Info: BAR60, BAR61 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3

VPS05178

Abstract: marking BAr EHA07008
Contextual Info: BAR 64-07 Silicon PIN Diode Array 3 • High voltage current controlled RF resistor for RF attenuator and switches 4 • Frequency range above 1 MHz • Low resistance and short carrier lifetime 2 • For frequencies up to 3 GHz 1 4 1 3 2 VPS05178 EHA07008

BFP196

Abstract: VPS05178
Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

BFP181

Abstract: VPS05178
Contextual Info: BFP181 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BF1005

Abstract: VPS05178
Contextual Info: BF1005 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V
Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05178

Abstract: SCHOTTKY DIODE SOT-143 EHA07008 W3551
Contextual Info: BAT 64-07 Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, 3 bias isolation and clamping applications • Integrated diffused guard ring 4 • Low forward voltage 2 1 4 VPS05178 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP193

Contextual Info: BFP193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers 4
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: BFP181 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 4
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BCV61

Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

Contextual Info: BFP182 NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

sot143 Marking code 53

Contextual Info: BF772 NPN Silicon RF Transistor 3
For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter

VPS05178

Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 9V
Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05178

Abstract: ma1022
Contextual Info: BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF 2040 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF 2030 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!