BFP182 Search Results

BFP182W

Abstract: BGA420
Contextual Info: BFP182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: BFP182 NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: BFP182W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFP182W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant and halogen-free package with visible leads

Contextual Info: Not for new design, this product will be obsoleted soon BFP182T / BFP182TW / BFP182TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency Lead Pb -free component

BFP182T

Abstract: marking 82
Contextual Info: BFP182T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low power applications D Low noise figure

Contextual Info: BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features

BFP182TRW

Abstract: silicon npn planar rf transistor sot 143 sot-143 vishay telefunken BFP182T BFP182TW
Contextual Info: BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features

Contextual Info: BFP182R Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

BFP182T

Abstract: BFP182TRW BFP182TW vishay MARKING UM
Contextual Info: BFP182T / BFP182TW / BFP182TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC

infineon marking L2

Abstract: BFP181 BFP182
Contextual Info: BFP182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Tem ic BFP182T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. £ Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features

Contextual Info: BFP182T / BFP182TW / BFP182TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at

Contextual Info: BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features

Contextual Info: ViSHAY _ ▼ BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

BFP181R

Abstract: BFP182R
Contextual Info: BFP182R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP182W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFP182T

Abstract: BFP182TRW BFP182TW
Contextual Info: BFP182T / BFP182TW / BFP182TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low power applications Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC

BFP181

Abstract: BFP182
Contextual Info: BFP182 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFP182T

Contextual Info: BFP182T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low power applications D Low noise figure

BFP182W

Abstract: BGA420
Contextual Info: BFP182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 1 mA to 20 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFP182T

Abstract: BFP182TRW BFP182TW
Contextual Info: BFP182T/BFP182TW/BFP182TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features

transistor B 1184

Contextual Info: SIEMENS BFP182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • * r = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code