BFP193 Search Results

07027

Abstract: 1.0037
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!

transistor marking zg

Abstract: marking z0 sot -6
Contextual Info: Y BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband ampli­

w19 transistor

Abstract: npn transistor w19 marking W19
Contextual Info: BFP193T / BFP193TW / BFP193TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications SOT-343 For low noise and high gain applications such as

BFP193

Contextual Info: BFP193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers 4
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: BFP193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BFP181

Abstract: BFP193
Contextual Info: BFP193 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

npn transistor w19

Abstract: w19 transistor marking W19 BFP193T BFP193TRW BFP193TW
Contextual Info: BFP193T/BFP193TW/BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.

npn transistor w19

Abstract: marking W19 BFP193T BFP193TRW BFP193TW marking 193 w19 transistor
Contextual Info: BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low noise figure High transition frequency fT = 8 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

1.0037

Abstract: BFP193 VPS05178
Contextual Info: BFP193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers 4
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: BFP193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz 4
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: BFP193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers 4
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

npn transistor w19

Abstract: w19 transistor
Contextual Info: wmmt BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband ampli­

w19 transistor

Abstract: npn transistor w19 marking W19 marking 193 w1943
Contextual Info: BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low noise figure High transition frequency fT = 8 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BFP193 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

marking W19

Abstract: npn transistor w19
Contextual Info: Not for new design, this product will be obsoleted soon BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Low noise figure High transition frequency fT = 8 GHz e3 Excellent large signal behaviour

w19 transistor

Abstract: npn transistor w19
Contextual Info: BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.

Contextual Info: BFP193 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

BFP181

Abstract: BFP193
Contextual Info: BFP193 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz 4
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

npn transistor w19

Abstract: BFP193TW w19 transistor silicon npn planar rf transistor sot 143 marking W19 85015 sot-143 vishay telefunken BFP193T BFP193TRW
Contextual Info: BFP193T/BFP193TW/BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.

BFP193W

Contextual Info: BFP193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz 4
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFP193W

Abstract: BGA420
Contextual Info: BFP193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFP193W

Abstract: C 828 BGA420
Contextual Info: BFP193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!