BF988 Search Results

S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15

Contextual Info: *OT » * 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988

BF988

Abstract: BF988A BF988B
Contextual Info: BF988 Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range

BF988

Abstract: BF988A BF988B
Contextual Info: BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range

BF988

Abstract: BF988A BF988B 4584 applications
Contextual Info: BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range

BF988A

Abstract: bf988 BF988B
Contextual Info: BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range

TO50 package

Abstract: BF988 BF988A BF988B
Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance

BF988A

Abstract: BF988B TO50 package
Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance

BF988

Abstract: BF988A BF988B
Contextual Info: BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range

BF988

Abstract: LTA 703 S BF988A
Contextual Info: Tem ic BF988 Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Electrostatic sensitive device. Observe precautions for handling jk Input and mixer stages of VHF- and UHF-tuners. Features • • • • Integrated gate protection diodes

Transistor BF988

Abstract: BF988 T79 marking IEC134 n-channel dual gate philips ll philips bf988
Contextual Info: * * * 8 1990 BF988 Datasheet status Preliminary specification date o f »asue October 1d90 Q U I C K R E F E R E N C E D ATA FEATURES • S h ort ch a rn e l tran sistor w ith high ratio |Yfs l/Cis. • Low noise gain con trolled am plifier to 1 G H z. D E S C R IP T IO N

bf988

Contextual Info: BF988 VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance

BF981

Abstract: bf498 BF982 BF980 SOT-103 Dual-Gate* bf981 BF926 sot103 BF980 Philips BF751
Contextual Info: Small Signal Leaded Devices Field Effect Transistors Dual-Gate MOSFET cont. •d SS VDS Type BF980 BF980A BF981 BF982 BF988 Pkg (V) SOT-103 SOT-103 SOT-103 SOT-103 SOT-103 18 18 20 20 12 (mA) _V(P) Gl-S max (V) yfs typ (mA/V) 1.3 20 2.5 1.3 2.5 19 19 14

BF988

Abstract: Transistor BF988 mosfet vhf power amplifier dual-gate
Contextual Info: Short-form product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FET BF988 PINNING FEATURES • Short channel transistor with high I Vfs| : Cis ratio • Low-noise gain-controlled amplifier to 1 GHz. PIN SYMBOL DESCRIPTION 1 s, b 2 d

L300M

Contextual Info: v m BF988 r n r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially VH F - and UHF- tuners. Features • Integrated gate protection diodes

Contextual Info: BF988 VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance

PHILIPS MOSFET MARKING

Abstract: SOT103 n channel depletion MOSFET Bf988 transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate
Contextual Info: h3E D Philips Components Data sheet status Preliminary specification date of issue October 1990 • bhS3TS4 GOTMBOM BIS m S I C 3 BF988 NAPC/PHILIPS SEMICON] Silicon n-channel dual gate MOS-FET FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TEST ISSUE OF H A NDB O O K SC07 OR D A T A S H E E T

BF988A

Abstract: BF988 BF988B TO50 package
Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance

TO50 package

Abstract: BF988 BF988A
Contextual Info: Not for new design, this product will be obsoleted soon BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • • • • • • • • • 3 Integrated gate protection diodes High cross modulation performance

CFY19

Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200

s525

Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Contextual Info: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52

CFY19-22

Abstract: CFY19 Dual-Gate* bf981 bf987
Contextual Info: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '

BF998 depletion

Abstract: BF988 bf988 sot 143 BF998
Contextual Info: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99