TRANSISTOR mosfet BF998
Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
Contextual Info: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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transistor SOT103 mosfet
Abstract: BF902
Contextual Info: PHILIPS INTERNATIONAL 41E D 7 1 1D f l 2 b GQEbô' IS IPHIN T-31-25 Philips Sem iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES BF902 QUICK REFERENCE DATA • Short channel transistor with high ratio IY,3I:CI3 • Low noise gain-controlled
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Transistor BF988
Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
Contextual Info: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high
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bbs3t31qq23b34bf998ot143+1ltis3t31
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bf998 Mop
Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Contextual Info: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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75beb6f998ot143bf998 mop+8bf998marking t54philips mosfet markingphilips mosfetmcb349dual gate fetn-channel dual-gate mos-fet for tvdual gate mos-fet
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