LTIS3T31 Search Results

1325 pnp

Abstract: BFT92 BFT92W
Contextual Info: P h llip ^ S e m ico n d u cto r^ ^ Bi LtiS3T31 PNP 5 GHz wideband QG5S3T4 T7ö H i APX nsistor BFT92W N AMER PHILIPS/DISCRETE FE A T U R E S • Prelim inary sp e cification b7E » PINNING PIN High power gain DESCRIPTION • Gold metallization ensures excellent reliability

Contextual Info: LtiS3T31 0035055 585 H A P X Philips Semiconductors N A PIER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor DESCRIPTION £ BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The

BGY581

Abstract: BGY580 DIN45004B
Contextual Info: Philips Semiconductors • LtiS3T31 DD323Û1 54b CATV amplifier modules ■ APX IProductspecification BGY580;BGY581 N AP1ER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING-SOT115C • Excellent linearity • Extremely low noise DESCRIPTION PIN 1 input

BZW86 Series

Abstract: BZW86-7V5R BZW86 BZW86-56 BZW86-27 BZW86-7V5 BZW86-9V1 IEC134
Contextual Info: N AMER P H I L I P S / D I S C R E T E TÜD D • 1 ^ 5 3 ^ 3 1 QDlObTS b BZW86 SERIES TRANSIENT SUPPRESSOR DIODES A ra n g e of diffu sed silic o n d io d e s in a D O -30 m e ta l envelope intended fo r u s e in th e p r o ­ te c tio n of th e e le c tr ic a l and e le c tro n ic equipm ent a g a in s t v o lta g e tr a n s ie n ts .

diode h5e

Abstract: BUK552 BUK552-50A BUK552-50B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E E5E D MÊ t,b53T31 O O S O b a S 2 m PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-eftect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high