BUK552 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE blE P • bbSSTSl 0 Q 3 D 7 fl5 T3 Q M A P X Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in

LTHJ

Abstract: TRANSISTOR D 819
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

k 552

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK552-60A/B Logic level GENERAL DESCRIPTION N -ch an nel e n h an cem en t m ode logic level fieid-effect pow er transistor in a plastic en velo pe.

buk552

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK552

Abstract: BUK552-100A BUK552-100B
Contextual Info: PHILIPS I N T E R N A T I O N A L bSE D • 7 1 1 D ö 2 b 0 Q bM2Bl Product Specification Philips Semiconductors BUK552-100A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

buk638-500b

Contextual Info: Pow er Devices Power M O SFET Transistors Logic Level FET's in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) RDs ON max (fl) 100 100 100 100 100 100 100 100 100 100 100 100 100 BUK541-100A BUK552-100B BUK542-100B

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ • GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

BUK552

Abstract: BUK552-100A BUK552-100B T0220AB
Contextual Info: bSE T> PHILIPS INTERNATIONAL m 7110aSb 00bM251 47M « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

T3D DIODE

Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B
Contextual Info: N AUER PHILIPS/DISCRETE blE D • bbSBTBl 0Q3D7AS T3Ü ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

Contextual Info: N AUER PHILIPS/DISCRETE bSE ]> bbS 3T31 0 0 30 7B 0 45= • APX Philips Semiconductors Product Specification Pow erM OS transistor Logic level FET_ G E N E R A L D E S C R IP T IO N N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

transistor T43

Abstract: BUK552 BUK552-60A BUK552-60B T0220AB ScansUX54
Contextual Info: PHILIPS I N T E R N A T I O N A L b5E D n 7 1 1 0 0 5 b 0 G b4 2 1b 0Q7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

k552

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BU K552-1OOA/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BUK446-800B

Abstract: BUK551-100A BUK583 BUK555 600b BUK5
Contextual Info: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

BUK542

Abstract: BUK542-60 BUK542-60A BUK542-60B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3