BUK5 Search Results

BUK542

Abstract: BUK542-100A BUK542-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL

DH47

Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Contextual Info: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

D0447

Abstract: K572 00M4 Scans-00501 BUK572 12VBS
Contextual Info: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

BUK573

Abstract: BUK573-100A BUK573-100B
Contextual Info: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode

k 246 transistor fet

Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
Contextual Info: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

BUK573-48C

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Clamped logic level FET BUK573-48C GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

LP2S

Abstract: BUK545-50A 40608G
Contextual Info: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode

BUK582-60A

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK582-60A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

Contextual Info: N AUER PHILIPS/DISCRETE blE P • bbSSTSl 0 Q 3 D 7 fl5 T3 Q M A P X Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: N AMER PHILIPS/DISCRETE bR E » bb53R31 0030625 4M7 « A P X Preliminary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK573-48C

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Clamped logic level FET GENERAL DESCRIPTION BUK573-48C QUICK REFERENCE DATA Protected N-channel enhancement moo logic i © v © i ri©ia-©n©ci pow©r transistor in a plastic full-pack envelope.

100C

Abstract: BUK564-200A
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

BUK541

Abstract: BUK541-100A BUK541-100B
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK541-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

BUK545-50A

Abstract: 1E05 BUK545 BUK545-50B
Contextual Info: N AMER PHILIPS/DISCRETE 5 SE D • fc.hS3T31 DDEOSTQ 4 ■ PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r - 3 7 -< 0 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK566-60A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK566-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

BUK551-60A

Abstract: BUK551-60B T0220AB fet transistor ft
Contextual Info: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 5bE PINNING - T0220AB PIN m 7110fl2b GO MM b ö M 465 • PHIN SYMBOL PARAMETER MAX. MAX. V ds Id P« T. BUK551 Drain-source voltage Drain current DC Total power dissipation

BUK545-50A

Abstract: BUK545 BUK545-50B
Contextual Info: N AMER PH IL IP S/ DISCR ET E 5SE D fc>h53T31 DDEOSTQ 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r -3 7 -,3 < 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

buk539

Abstract: BUK539-60 539-60A BUK539-60A Philips BUK 100
Contextual Info: T ï -Z > 9 -Æ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK539-60A PowerMOS transìstor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK583-60A

Contextual Info: PHILIPS INTERNATIONAL tSE D • 7 1 1 0 0 2 b O D b M E T D *Î51 H P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channei enhancement mode

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK582-60A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

BUK551-100A

Abstract: BUK551-100
Contextual Info: P ro d u ct S pe cifica tion P hilip s S em ico n d u cto rs PowerMOS transistor BUK551-100A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.